Structural Evolution of Polyaluminocarbosilane during the Polymer–Ceramic Conversion Process

Polyaluminocarbosilane (PACS) is an important precursor for silicon carbide (SiC) fibers and ceramics. The structure of PACS and the oxidative curing, thermal pyrolysis, and sintering effect of Al have already been substantially studied. However, the structural evolution of polyaluminocarbosilane it...

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Bibliographic Details
Main Authors: Fucheng Xie, Yangpeng Duan, Gaoming Mo, Qing Huang, Zhengren Huang
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Materials
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Online Access:https://www.mdpi.com/1996-1944/16/11/4172
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Summary:Polyaluminocarbosilane (PACS) is an important precursor for silicon carbide (SiC) fibers and ceramics. The structure of PACS and the oxidative curing, thermal pyrolysis, and sintering effect of Al have already been substantially studied. However, the structural evolution of polyaluminocarbosilane itself during the polymer–ceramic conversion process, especially the changes in the structure forms of Al, are still pending questions. In this study, PACS with a higher Al content is synthesized and the above questions are elaborately investigated by FTIR, NMR, Raman, XPS, XRD, and TEM analyses. It is found that up to 800–900 °C the amorphous SiO<sub>x</sub>C<sub>y</sub>, AlO<sub>x</sub>Si<sub>y</sub>, and free carbon phases are initially formed. With increasing temperature, the SiO<sub>x</sub>C<sub>y</sub> phase partially separates into SiO<sub>2</sub> then reacts with free carbon. The AlO<sub>x</sub>Si<sub>y</sub> phase changes into Al<sub>3</sub>C<sub>4</sub> and Al<sub>2</sub>O<sub>3</sub> by reaction with free carbon at around 1100 °C. The complicated reactions between Al<sub>3</sub>C<sub>4</sub>, Al<sub>2</sub>O<sub>3</sub>, and free carbon occur, leading to the formation of the Al<sub>4</sub>O<sub>4</sub>C and Al<sub>2</sub>OC phases at around 1600 °C, which then react with the SiC and free carbon, resulting in the formation of the Al<sub>4</sub>SiC<sub>4</sub> phase at 1800 °C. The amorphous carbon phase grows with the increasing temperature, which then turns into a crystalline graphitic structure at around 1600 °C. The growth of β-SiC is inhibited by the existence of the Al<sub>4</sub>O<sub>4</sub>C, Al<sub>2</sub>OC, and Al<sub>4</sub>SiC<sub>4</sub> phases, which also favor the formation of α-SiC at 1600–1800 °C.
ISSN:1996-1944