Microwave characterization of tantalum superconducting resonators on silicon substrate with niobium buffer layer
Tantalum thin films sputtered on unheated silicon substrates are characterized with microwaves at around 10 GHz in a 10 mK environment. We show that the phase of tantalum with a body-centered cubic lattice (α-Ta) can be grown selectively by depositing a niobium buffer layer prior to a tantalum film....
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2024-02-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0165137 |