GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate
The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO<sub>2</sub> substrate with t...
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MDPI AG
2020-09-01
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| Online Access: | https://www.mdpi.com/2073-4352/10/9/787 |
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| author | Wurui Song Fang Ren Yunyu Wang Yue Yin Shuo Zhang Bo Shi Tao Feng Jianwei Wang Meng Liang Yiyun Zhang Tongbo Wei Jianchang Yan Junxi Wang Jinmin Li Xiaoyan Yi Zhiqiang Liu |
| author_facet | Wurui Song Fang Ren Yunyu Wang Yue Yin Shuo Zhang Bo Shi Tao Feng Jianwei Wang Meng Liang Yiyun Zhang Tongbo Wei Jianchang Yan Junxi Wang Jinmin Li Xiaoyan Yi Zhiqiang Liu |
| author_sort | Wurui Song |
| collection | DOAJ |
| description | The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO<sub>2</sub> substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned <i>c</i>-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics. |
| first_indexed | 2024-03-10T16:33:20Z |
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| issn | 2073-4352 |
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| last_indexed | 2024-03-10T16:33:20Z |
| publishDate | 2020-09-01 |
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| series | Crystals |
| spelling | doaj.art-df01dda7ee0547719c5c0c301f903d862023-11-20T12:41:07ZengMDPI AGCrystals2073-43522020-09-0110978710.3390/cryst10090787GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) SubstrateWurui Song0Fang Ren1Yunyu Wang2Yue Yin3Shuo Zhang4Bo Shi5Tao Feng6Jianwei Wang7Meng Liang8Yiyun Zhang9Tongbo Wei10Jianchang Yan11Junxi Wang12Jinmin Li13Xiaoyan Yi14Zhiqiang Liu15Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaAnhui Province Engineering Laboratory for Antennas and Microwave Hefei, Hefei 230088, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSchool of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaThe growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO<sub>2</sub> substrate with the use of nanorods and graphene buffer layers by metal organic chemical vapor deposition (MOCVD). The effect of different growth parameters on the morphology and vertical-to-lateral aspect ratio of nanorods was discussed by analyzing growth kinetics. Furthermore, we tuned nanorod coalescence to obtain continuous GaN films with a blue-LED structure by adjusting growth conditions. The GaN films exhibited a hexagonal wurtzite structure and aligned <i>c</i>-axis orientation demonstrated by X-ray diffractometer (XRD), Raman, and transmission electron microscopy (TEM) results. Finally, five-pair InGaN/GaN multi-quantum-wells (MQWs) were grown. The photoluminescence (PL) showed an intense emission peak at 475 nm, and the current–voltage (I-V) curve shows a rectifying behavior with a turn-on voltage of 5.7 V. This work provides a promising fabrication method for the large-area and low-cost GaN-based devices on amorphous substrates and opens up the further possibility of nitride integration with Si (100) complementary metal oxide semiconductor (CMOS) electronics.https://www.mdpi.com/2073-4352/10/9/787GaNvan der Waals epitaxyamorphous substratesgraphenenanorods |
| spellingShingle | Wurui Song Fang Ren Yunyu Wang Yue Yin Shuo Zhang Bo Shi Tao Feng Jianwei Wang Meng Liang Yiyun Zhang Tongbo Wei Jianchang Yan Junxi Wang Jinmin Li Xiaoyan Yi Zhiqiang Liu GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate Crystals GaN van der Waals epitaxy amorphous substrates graphene nanorods |
| title | GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate |
| title_full | GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate |
| title_fullStr | GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate |
| title_full_unstemmed | GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate |
| title_short | GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate |
| title_sort | gan based leds grown on graphene covered sio sub 2 sub si 100 substrate |
| topic | GaN van der Waals epitaxy amorphous substrates graphene nanorods |
| url | https://www.mdpi.com/2073-4352/10/9/787 |
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