GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate

GaN-Based LEDs Grown on Graphene-Covered SiO<sub>2</sub>/Si (100) Substrate

The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amorphous SiO<sub>2</sub> substrate with t...

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Bibliografiska uppgifter
Huvudupphovsmän: Wurui Song, Fang Ren, Yunyu Wang, Yue Yin, Shuo Zhang, Bo Shi, Tao Feng, Jianwei Wang, Meng Liang, Yiyun Zhang, Tongbo Wei, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaoyan Yi, Zhiqiang Liu
Materialtyp: Artikel
Språk:English
Publicerad: MDPI AG 2020-09-01
Serie:Crystals
Ämnen:
GaN
van der Waals epitaxy
amorphous substrates
graphene
nanorods
Länkar:https://www.mdpi.com/2073-4352/10/9/787

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https://www.mdpi.com/2073-4352/10/9/787

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