Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element

Abstract Here, a soft switched three‐level boost converter with high voltage gain is proposed which is suitable for high step‐up applications with wide output power range. In this converter, a ZVT auxiliary circuit is used which provides soft switching in a wide range of output power independent of...

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Main Authors: Hamed Moradmand Jazi, Mahmoud Fekri, Milad Keshani, Ramin Rahimzadeh Khorasani, Ehsan Adib, Patrick Wheeler, Herminio‐Martinez Garcia, Guillermo Velasco‐Quesada
Format: Article
Language:English
Published: Wiley 2021-11-01
Series:IET Power Electronics
Subjects:
Online Access:https://doi.org/10.1049/pel2.12183
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author Hamed Moradmand Jazi
Mahmoud Fekri
Milad Keshani
Ramin Rahimzadeh Khorasani
Ehsan Adib
Patrick Wheeler
Herminio‐Martinez Garcia
Guillermo Velasco‐Quesada
author_facet Hamed Moradmand Jazi
Mahmoud Fekri
Milad Keshani
Ramin Rahimzadeh Khorasani
Ehsan Adib
Patrick Wheeler
Herminio‐Martinez Garcia
Guillermo Velasco‐Quesada
author_sort Hamed Moradmand Jazi
collection DOAJ
description Abstract Here, a soft switched three‐level boost converter with high voltage gain is proposed which is suitable for high step‐up applications with wide output power range. In this converter, a ZVT auxiliary circuit is used which provides soft switching in a wide range of output power independent of load variation. Utilizing coupled‐inductors with one magnetic core removes extra auxiliary core in the soft switching circuit and provides high voltage gain in conjunction with size reduction. Also, the secondary and tertiary leakage inductances of the coupled‐inductors minimize the reverse recovery problem of the output diodes. Due to its three‐level structure, it has very low voltage stress over semiconductor elements in comparison to the existing interleaved structures, resulting in using MOSFETs with low on‐resistance and thus lower conduction losses and cost. Operating modes as well as analytical analysis of the proposed converter are discussed. Finally, in order to validate the proposed converter performance, experimental results from a 200‐W laboratory prototype are presented.
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spelling doaj.art-df2d5931b3d140098fee885884c00f872022-12-22T02:43:37ZengWileyIET Power Electronics1755-45351755-45432021-11-0114142324233610.1049/pel2.12183Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic elementHamed Moradmand Jazi0Mahmoud Fekri1Milad Keshani2Ramin Rahimzadeh Khorasani3Ehsan Adib4Patrick Wheeler5Herminio‐Martinez Garcia6Guillermo Velasco‐Quesada7Department of Electronics Engineering, Eastern Barcelona School of Engineering (EEBE) Technical University of Catalonia (UPC) BarcelonaTech Barcelona SpainDepartment of Electrical and Computer Engineering Isfahan University of Technology Isfahan IranDepartment of Electrical and Computer Engineering University of Toronto Toronto Ontario CanadaSchool of Electrical Engineering and Computer Science Pennsylvania State University University Park Pennsylvania USADepartment of Electrical and Computer Engineering Isfahan University of Technology Isfahan IranPower Electronics Machines and Control Research Group University of Nottingham Nottingham UKDepartment of Electronics Engineering, Eastern Barcelona School of Engineering (EEBE) Technical University of Catalonia (UPC) BarcelonaTech Barcelona SpainDepartment of Electronics Engineering, Eastern Barcelona School of Engineering (EEBE) Technical University of Catalonia (UPC) BarcelonaTech Barcelona SpainAbstract Here, a soft switched three‐level boost converter with high voltage gain is proposed which is suitable for high step‐up applications with wide output power range. In this converter, a ZVT auxiliary circuit is used which provides soft switching in a wide range of output power independent of load variation. Utilizing coupled‐inductors with one magnetic core removes extra auxiliary core in the soft switching circuit and provides high voltage gain in conjunction with size reduction. Also, the secondary and tertiary leakage inductances of the coupled‐inductors minimize the reverse recovery problem of the output diodes. Due to its three‐level structure, it has very low voltage stress over semiconductor elements in comparison to the existing interleaved structures, resulting in using MOSFETs with low on‐resistance and thus lower conduction losses and cost. Operating modes as well as analytical analysis of the proposed converter are discussed. Finally, in order to validate the proposed converter performance, experimental results from a 200‐W laboratory prototype are presented.https://doi.org/10.1049/pel2.12183Power electronics, supply and supervisory circuitsInductors and transformersTransformers and reactorsPower convertors and power supplies to apparatus
spellingShingle Hamed Moradmand Jazi
Mahmoud Fekri
Milad Keshani
Ramin Rahimzadeh Khorasani
Ehsan Adib
Patrick Wheeler
Herminio‐Martinez Garcia
Guillermo Velasco‐Quesada
Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
IET Power Electronics
Power electronics, supply and supervisory circuits
Inductors and transformers
Transformers and reactors
Power convertors and power supplies to apparatus
title Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
title_full Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
title_fullStr Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
title_full_unstemmed Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
title_short Soft‐switching non‐isolated high step‐up three‐level boost converter using single magnetic element
title_sort soft switching non isolated high step up three level boost converter using single magnetic element
topic Power electronics, supply and supervisory circuits
Inductors and transformers
Transformers and reactors
Power convertors and power supplies to apparatus
url https://doi.org/10.1049/pel2.12183
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