Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D) materials are a potential replacement for silicon since even atomically thin 2D semiconductors can maintain sizable mobilities and provide enhanced gate control in a stacked channel nanosheet transistor geometry....

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Bibliographic Details
Main Authors: Theresia Knobloch, Siegfried Selberherr, Tibor Grasser
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
2D materials
field effect transistors
CMOS logic
nanoscale devices
nanosheet FET
contact resistances
Online Access:https://www.mdpi.com/2079-4991/12/20/3548

Internet

https://www.mdpi.com/2079-4991/12/20/3548

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