Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells
Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell,...
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MDPI AG
2022-05-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/5/670 |
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| author | Jing Xu Kunjie Yang Qingguo Xu Xiaofang Zhu Xin Wang Ming Lu |
| author_facet | Jing Xu Kunjie Yang Qingguo Xu Xiaofang Zhu Xin Wang Ming Lu |
| author_sort | Jing Xu |
| collection | DOAJ |
| description | Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm<sup>2</sup>, an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 × 10<sup>11</sup> cm<sup>−2</sup> to 2 × 10<sup>12</sup> cm<sup>−2</sup>. Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density. |
| first_indexed | 2024-03-10T03:05:14Z |
| format | Article |
| id | doaj.art-df6477eef7294db3b800523ba2bcaf78 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T03:05:14Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-df6477eef7294db3b800523ba2bcaf782023-11-23T10:35:15ZengMDPI AGCrystals2073-43522022-05-0112567010.3390/cryst12050670Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar CellsJing Xu0Kunjie Yang1Qingguo Xu2Xiaofang Zhu3Xin Wang4Ming Lu5Department of Physics, Yantai University, Yantai 264005, ChinaCollege of Nuclear Equipment and Nuclear Engineering, Yantai University, Yantai 264005, ChinaShanghai Solar Energy Research Center, Shanghai 200241, ChinaShanghai Solar Energy Research Center, Shanghai 200241, ChinaState Key Laboratory of Space Power Sources Technology, Shanghai Institute of Space Power Sources, Shanghai 200245, ChinaCollege of Nuclear Equipment and Nuclear Engineering, Yantai University, Yantai 264005, ChinaInverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm<sup>2</sup>, an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 × 10<sup>11</sup> cm<sup>−2</sup> to 2 × 10<sup>12</sup> cm<sup>−2</sup>. Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density.https://www.mdpi.com/2073-4352/12/5/670irradiation effectsproton irradiationIMM3J solar cellefficiencyshort circuit currentopen circuit voltage |
| spellingShingle | Jing Xu Kunjie Yang Qingguo Xu Xiaofang Zhu Xin Wang Ming Lu Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells Crystals irradiation effects proton irradiation IMM3J solar cell efficiency short circuit current open circuit voltage |
| title | Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells |
| title_full | Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells |
| title_fullStr | Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells |
| title_full_unstemmed | Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells |
| title_short | Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells |
| title_sort | fabrication and irradiation effect of inverted metamorphic triple junction gainp gaas ingaas solar cells |
| topic | irradiation effects proton irradiation IMM3J solar cell efficiency short circuit current open circuit voltage |
| url | https://www.mdpi.com/2073-4352/12/5/670 |
| work_keys_str_mv | AT jingxu fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells AT kunjieyang fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells AT qingguoxu fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells AT xiaofangzhu fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells AT xinwang fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells AT minglu fabricationandirradiationeffectofinvertedmetamorphictriplejunctiongainpgaasingaassolarcells |