The microstructural changes of Ge2Sb2Te5 thin film during crystallization process
Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5025204 |
| _version_ | 1819204141844529152 |
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| author | Jingbo Xu Chao Qi Limin Chen Long Zheng Qiyun Xie |
| author_facet | Jingbo Xu Chao Qi Limin Chen Long Zheng Qiyun Xie |
| author_sort | Jingbo Xu |
| collection | DOAJ |
| description | Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process. |
| first_indexed | 2024-12-23T04:31:06Z |
| format | Article |
| id | doaj.art-df76e107c06345b89722cf37e2e40f2d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T04:31:06Z |
| publishDate | 2018-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-df76e107c06345b89722cf37e2e40f2d2022-12-21T18:00:03ZengAIP Publishing LLCAIP Advances2158-32262018-05-0185055006055006-610.1063/1.5025204017805ADVThe microstructural changes of Ge2Sb2Te5 thin film during crystallization processJingbo Xu0Chao Qi1Limin Chen2Long Zheng3Qiyun Xie4Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, ChinaKey Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, ChinaKey Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, ChinaSchool of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, ChinaKey Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, Jiangsu, ChinaPhase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.http://dx.doi.org/10.1063/1.5025204 |
| spellingShingle | Jingbo Xu Chao Qi Limin Chen Long Zheng Qiyun Xie The microstructural changes of Ge2Sb2Te5 thin film during crystallization process AIP Advances |
| title | The microstructural changes of Ge2Sb2Te5 thin film during crystallization process |
| title_full | The microstructural changes of Ge2Sb2Te5 thin film during crystallization process |
| title_fullStr | The microstructural changes of Ge2Sb2Te5 thin film during crystallization process |
| title_full_unstemmed | The microstructural changes of Ge2Sb2Te5 thin film during crystallization process |
| title_short | The microstructural changes of Ge2Sb2Te5 thin film during crystallization process |
| title_sort | microstructural changes of ge2sb2te5 thin film during crystallization process |
| url | http://dx.doi.org/10.1063/1.5025204 |
| work_keys_str_mv | AT jingboxu themicrostructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT chaoqi themicrostructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT liminchen themicrostructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT longzheng themicrostructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT qiyunxie themicrostructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT jingboxu microstructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT chaoqi microstructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT liminchen microstructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT longzheng microstructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess AT qiyunxie microstructuralchangesofge2sb2te5thinfilmduringcrystallizationprocess |