Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage
A novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be...
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| Format: | Article |
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MDPI AG
2020-01-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/3/753 |
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| author | Jee-Hun Jeong Ju-Hong Cha Goon-Ho Kim Sung-Hwan Cho Ho-Jun Lee |
| author_facet | Jee-Hun Jeong Ju-Hong Cha Goon-Ho Kim Sung-Hwan Cho Ho-Jun Lee |
| author_sort | Jee-Hun Jeong |
| collection | DOAJ |
| description | A novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be filled with oxide or gate materials. Indeed, it has almost the same cross-sectional structure as the active region of a SiC trench MOSFET. Therefore, there is little or no additional process loads. A conventional floating field ring (FFR) structure utilizes the spreading of the electric field in the periodically depleted surface region formed between a heavily doped equipotential region. On the other hand, in the trenched ring structure, an additional quasi-equipotential region is provided by the BPW region, which enables deeper and wider field-spreading profiles, and less field crowding at the edge region. The two-dimensional Technology Computer Aided Design (2D-TCAD) simulation results show that the proposed trenched ring-edge termination structures have an improved breakdown voltage compared to the conventional floating field ring structure. |
| first_indexed | 2024-12-13T07:43:42Z |
| format | Article |
| id | doaj.art-df953aa8846d4006b90432c00b9fd100 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-12-13T07:43:42Z |
| publishDate | 2020-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-df953aa8846d4006b90432c00b9fd1002022-12-21T23:54:54ZengMDPI AGApplied Sciences2076-34172020-01-0110375310.3390/app10030753app10030753Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown VoltageJee-Hun Jeong0Ju-Hong Cha1Goon-Ho Kim2Sung-Hwan Cho3Ho-Jun Lee4Department of Electrical Engineering, Pusan National University, Pusan 46241, KoreaDepartment of Electrical Engineering, Pusan National University, Pusan 46241, KoreaDepartment of Electrical Engineering, Pusan National University, Pusan 46241, KoreaDepartment of Electrical Engineering, Pusan National University, Pusan 46241, KoreaDepartment of Electrical Engineering, Pusan National University, Pusan 46241, KoreaA novel edge-termination structure for a SiC trench metal−oxide semiconductor field-effect transistor (MOSFET) power device is proposed. The key feature of the proposed structure is a periodically formed SiC trench with a bottom protection well (BPW) implantation region. The trench can be filled with oxide or gate materials. Indeed, it has almost the same cross-sectional structure as the active region of a SiC trench MOSFET. Therefore, there is little or no additional process loads. A conventional floating field ring (FFR) structure utilizes the spreading of the electric field in the periodically depleted surface region formed between a heavily doped equipotential region. On the other hand, in the trenched ring structure, an additional quasi-equipotential region is provided by the BPW region, which enables deeper and wider field-spreading profiles, and less field crowding at the edge region. The two-dimensional Technology Computer Aided Design (2D-TCAD) simulation results show that the proposed trenched ring-edge termination structures have an improved breakdown voltage compared to the conventional floating field ring structure.https://www.mdpi.com/2076-3417/10/3/753breakdown voltageedge terminationconventional floating field ringsic trench structurebottom protection well |
| spellingShingle | Jee-Hun Jeong Ju-Hong Cha Goon-Ho Kim Sung-Hwan Cho Ho-Jun Lee Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage Applied Sciences breakdown voltage edge termination conventional floating field ring sic trench structure bottom protection well |
| title | Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage |
| title_full | Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage |
| title_fullStr | Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage |
| title_full_unstemmed | Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage |
| title_short | Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage |
| title_sort | study of a sic trench mosfet edge termination structure with a bottom protection well for a high breakdown voltage |
| topic | breakdown voltage edge termination conventional floating field ring sic trench structure bottom protection well |
| url | https://www.mdpi.com/2076-3417/10/3/753 |
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