Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process
Amorphous SrTiO3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in t...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2019-07-01
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| Series: | Journal of Asian Ceramic Societies |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/21870764.2019.1625499 |
| _version_ | 1818951697561550848 |
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| author | Hui Tang Xin-Gui Tang Yan-Ping Jiang Qiu-Xiang Liu Wen-Hua Li Li Luo |
| author_facet | Hui Tang Xin-Gui Tang Yan-Ping Jiang Qiu-Xiang Liu Wen-Hua Li Li Luo |
| author_sort | Hui Tang |
| collection | DOAJ |
| description | Amorphous SrTiO3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO3/FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (Roff/Ron) of 102. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO3 thin films. Ohmic conduction dominated in the initial high- and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO3 films have potential resistive memory applications. |
| first_indexed | 2024-12-20T09:38:36Z |
| format | Article |
| id | doaj.art-df9da0aeaded49088c30db4f5a6f663f |
| institution | Directory Open Access Journal |
| issn | 2187-0764 |
| language | English |
| last_indexed | 2024-12-20T09:38:36Z |
| publishDate | 2019-07-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Asian Ceramic Societies |
| spelling | doaj.art-df9da0aeaded49088c30db4f5a6f663f2022-12-21T19:44:56ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642019-07-017329830510.1080/21870764.2019.16254991625499Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel processHui Tang0Xin-Gui Tang1Yan-Ping Jiang2Qiu-Xiang Liu3Wen-Hua Li4Li Luo5Guangdong University of TechnologyGuangdong University of TechnologyGuangdong University of TechnologyGuangdong University of TechnologyGuangdong University of TechnologyGuangdong University of TechnologyAmorphous SrTiO3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO3/FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (Roff/Ron) of 102. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO3 thin films. Ohmic conduction dominated in the initial high- and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO3 films have potential resistive memory applications.http://dx.doi.org/10.1080/21870764.2019.1625499Memristive deviceamorphous SrTiO3conduction mechanism |
| spellingShingle | Hui Tang Xin-Gui Tang Yan-Ping Jiang Qiu-Xiang Liu Wen-Hua Li Li Luo Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process Journal of Asian Ceramic Societies Memristive device amorphous SrTiO3 conduction mechanism |
| title | Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process |
| title_full | Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process |
| title_fullStr | Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process |
| title_full_unstemmed | Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process |
| title_short | Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process |
| title_sort | bipolar resistive switching characteristics of amorphous srtio3 thin films prepared by the sol gel process |
| topic | Memristive device amorphous SrTiO3 conduction mechanism |
| url | http://dx.doi.org/10.1080/21870764.2019.1625499 |
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