Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications
This work presents a two-step procedure to obtain thin films with a combination of CuSbS2 and Cu12Sb4S13 phases for study in thermoelectric applications. The procedure consisted of the physical evaporation of sulfides layers (Sb2S3 and CuS) on glass substrates and the subsequent annealing of the sam...
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2023-05-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100256&lng=en&tlng=en |
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| author | D. Trejo-Zamudio M. Morales-Luna R. Aruna-Devi C.E. Pérez-García A. Sosa-Domínguez J.G. Quiñones-Galván F.J. de Moure-Flores J. Santos-Cruz |
| author_facet | D. Trejo-Zamudio M. Morales-Luna R. Aruna-Devi C.E. Pérez-García A. Sosa-Domínguez J.G. Quiñones-Galván F.J. de Moure-Flores J. Santos-Cruz |
| author_sort | D. Trejo-Zamudio |
| collection | DOAJ |
| description | This work presents a two-step procedure to obtain thin films with a combination of CuSbS2 and Cu12Sb4S13 phases for study in thermoelectric applications. The procedure consisted of the physical evaporation of sulfides layers (Sb2S3 and CuS) on glass substrates and the subsequent annealing of the samples in a N2 atmosphere. The characterizations by Raman spectroscopy and XRD revealed that the samples presented a varied percentage of Cu12Sb4S13 and CuSbS2. The results indicated that the percentage of phases depended on the initial thickness of the sulfide layers and the annealing temperature. The lower initial ratio between sulfide thicknesses and annealing temperature above 300 °C favored the formation of Cu12Sb4S13. However, the thermoelectric properties were improved when the phases coexisted in the thin film compared to samples with high percentages of Cu12Sb4S13. In this way, a sample with a power factor of 2.30 μW /cm∙ K2 at 60 ºC was identified. |
| first_indexed | 2024-04-09T13:43:10Z |
| format | Article |
| id | doaj.art-dfb696fa749d415a9b06872d07bbecff |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-04-09T13:43:10Z |
| publishDate | 2023-05-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-dfb696fa749d415a9b06872d07bbecff2023-05-09T07:34:49ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392023-05-012610.1590/1980-5373-mr-2022-0469Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric ApplicationsD. Trejo-ZamudioM. Morales-LunaR. Aruna-DeviC.E. Pérez-Garcíahttps://orcid.org/0000-0003-1689-6350A. Sosa-DomínguezJ.G. Quiñones-GalvánF.J. de Moure-FloresJ. Santos-Cruzhttps://orcid.org/0000-0002-3619-1713This work presents a two-step procedure to obtain thin films with a combination of CuSbS2 and Cu12Sb4S13 phases for study in thermoelectric applications. The procedure consisted of the physical evaporation of sulfides layers (Sb2S3 and CuS) on glass substrates and the subsequent annealing of the samples in a N2 atmosphere. The characterizations by Raman spectroscopy and XRD revealed that the samples presented a varied percentage of Cu12Sb4S13 and CuSbS2. The results indicated that the percentage of phases depended on the initial thickness of the sulfide layers and the annealing temperature. The lower initial ratio between sulfide thicknesses and annealing temperature above 300 °C favored the formation of Cu12Sb4S13. However, the thermoelectric properties were improved when the phases coexisted in the thin film compared to samples with high percentages of Cu12Sb4S13. In this way, a sample with a power factor of 2.30 μW /cm∙ K2 at 60 ºC was identified.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100256&lng=en&tlng=enCuSbS2 chalcostebiteCu12Sb4S13 tetrahedritethin filmsthermoelectric |
| spellingShingle | D. Trejo-Zamudio M. Morales-Luna R. Aruna-Devi C.E. Pérez-García A. Sosa-Domínguez J.G. Quiñones-Galván F.J. de Moure-Flores J. Santos-Cruz Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications Materials Research CuSbS2 chalcostebite Cu12Sb4S13 tetrahedrite thin films thermoelectric |
| title | Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications |
| title_full | Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications |
| title_fullStr | Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications |
| title_full_unstemmed | Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications |
| title_short | Optoelectronic Properties of CuSbS2 and Cu12Sb4S13 Thin Films for Thermoelectric Applications |
| title_sort | optoelectronic properties of cusbs2 and cu12sb4s13 thin films for thermoelectric applications |
| topic | CuSbS2 chalcostebite Cu12Sb4S13 tetrahedrite thin films thermoelectric |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100256&lng=en&tlng=en |
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