Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
<p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2017-09-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/1232 |
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| author | V. M. Katerynchuk B. V. Kushnir Z. R. Kudrynskyi Z. D. Kovalyuk I. G. Tkachuk O. S. Litvin |
| author_facet | V. M. Katerynchuk B. V. Kushnir Z. R. Kudrynskyi Z. D. Kovalyuk I. G. Tkachuk O. S. Litvin |
| author_sort | V. M. Katerynchuk |
| collection | DOAJ |
| description | <p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<sub>2</sub>O<sub>3</sub> on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0.74 - 1.0 µm. </span><strong><br /></strong></p><p><strong>Key words: </strong><span>InSe, GaTe, layered crystals, heterojunction, AFM-images spectral characteristics.</span></p> |
| first_indexed | 2024-12-23T14:51:41Z |
| format | Article |
| id | doaj.art-dfff7e335499418cb91dd3409808937e |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-12-23T14:51:41Z |
| publishDate | 2017-09-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-dfff7e335499418cb91dd3409808937e2022-12-21T17:42:55ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892017-09-0117450751010.15330/pcss.17.4.507-5101864Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSeV. M. Katerynchuk0B. V. Kushnir1Z. R. Kudrynskyi2Z. D. Kovalyuk3I. G. Tkachuk4O. S. Litvin5Інститут проблем матеріалознавства ім. І.М. Францевича НАН України, Чернівецьке відділенняІнститут проблем матеріалознавства ім. І.М. Францевича НАН України, Чернівецьке відділенняІнститут проблем матеріалознавства ім. І.М. Францевича НАН України, Чернівецьке відділенняІнститут проблем матеріалознавства ім. І.М. Францевича НАН України, Чернівецьке відділенняІнститут проблем матеріалознавства ім. І.М. Францевича НАН України, Чернівецьке відділенняІнститут фізики напівпровідників ім. В. Є. Лашкарьова НАН України<p><span>We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga<sub>2</sub>O<sub>3</sub> on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0.74 - 1.0 µm. </span><strong><br /></strong></p><p><strong>Key words: </strong><span>InSe, GaTe, layered crystals, heterojunction, AFM-images spectral characteristics.</span></p>http://journals.pu.if.ua/index.php/pcss/article/view/1232 |
| spellingShingle | V. M. Katerynchuk B. V. Kushnir Z. R. Kudrynskyi Z. D. Kovalyuk I. G. Tkachuk O. S. Litvin Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe Фізика і хімія твердого тіла |
| title | Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe |
| title_full | Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe |
| title_fullStr | Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe |
| title_full_unstemmed | Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe |
| title_short | Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe |
| title_sort | topology and photoelectric properties of heterostructure p gate n inse |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/1232 |
| work_keys_str_mv | AT vmkaterynchuk topologyandphotoelectricpropertiesofheterostructurepgateninse AT bvkushnir topologyandphotoelectricpropertiesofheterostructurepgateninse AT zrkudrynskyi topologyandphotoelectricpropertiesofheterostructurepgateninse AT zdkovalyuk topologyandphotoelectricpropertiesofheterostructurepgateninse AT igtkachuk topologyandphotoelectricpropertiesofheterostructurepgateninse AT oslitvin topologyandphotoelectricpropertiesofheterostructurepgateninse |