| Summary: | One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and <i>long</i>-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and <i>long</i>-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the <i>n</i>-/<i>p</i>-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band <i>p</i>-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures.
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