Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications

Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications

This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET) with a 1 µs write pulse of maximum ±5 V amplitude and WRITE endurance above 109 cycles. Fe-finFET devices with single and multiple fins have been fabricated on an SOI wafer using a gate first process, with ga...

Full description

Bibliographic Details
Main Authors: Sourav De, Md. Aftab Baig, Bo-Han Qiu, Franz Müller, Hoang-Hiep Le, Maximilian Lederer, Thomas Kämpfe, Tarek Ali, Po-Jung Sung, Chun-Jung Su, Yao-Jen Lee, Darsen D. Lu
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-01-01
Series:Frontiers in Nanotechnology
Subjects:
hafnium oxide
ferroelectric finFET
non-volatile memory
variation
neural networks
Online Access:https://www.frontiersin.org/articles/10.3389/fnano.2021.826232/full

Similar Items

Similar Items