A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width
This paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirection...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8943985/ |
| _version_ | 1830187222791356416 |
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| author | Moon-Kyu Cho Ickhyun Song John D. Cressler |
| author_facet | Moon-Kyu Cho Ickhyun Song John D. Cressler |
| author_sort | Moon-Kyu Cho |
| collection | DOAJ |
| description | This paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirectional distributed amplifiers (BDAs). The reconfigurable functionality and fast mode selection are obtained by using the absorptive series-shunt switches. The proposed power divider/combiner provides four different operational states depending on the control inputs for the BDAs and the series-shunt switches. The dual-path mode supports both divider and combiner operations, and the measured gain is greater than 7.8 dB and the isolation between output ports is better than 23 dB over the 3-dB bandwidth of 2-23 GHz. The measured noise figure (NF) of the dual-path mode is below 10 dB, while maximum amplitude and phase imbalances are 0.2 dB and 1.8 degrees, respectively. The single-path mode shows a measured gain of > 7.8 dB, and a port-to-port isolation > 35 dB. The measured NF is below 12 dB from 8 to 26 GHz. In addition, the proposed circuit shows the maximum output 1-dB compression point (OP1dB) of 4.6 dBm, and good matching characteristics, with a DC power consumption of 120 mW. The chip area of the reconfigurable two-way SiGe bi-directional active power divider/combiner is 1.43 mm × 0.92 mm. |
| first_indexed | 2024-12-17T22:24:50Z |
| format | Article |
| id | doaj.art-e026397cec984f669b0455d8009471bb |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-17T22:24:50Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-e026397cec984f669b0455d8009471bb2022-12-21T21:30:23ZengIEEEIEEE Access2169-35362020-01-0182578258910.1109/ACCESS.2019.29627398943985A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam WidthMoon-Kyu Cho0https://orcid.org/0000-0002-4116-4496Ickhyun Song1https://orcid.org/0000-0002-7669-9853John D. Cressler2https://orcid.org/0000-0001-8268-5135Georgia Electronic Design Center, Georgia Institute of Technology, Atlanta, GA, USASchool of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USASchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USAThis paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirectional distributed amplifiers (BDAs). The reconfigurable functionality and fast mode selection are obtained by using the absorptive series-shunt switches. The proposed power divider/combiner provides four different operational states depending on the control inputs for the BDAs and the series-shunt switches. The dual-path mode supports both divider and combiner operations, and the measured gain is greater than 7.8 dB and the isolation between output ports is better than 23 dB over the 3-dB bandwidth of 2-23 GHz. The measured noise figure (NF) of the dual-path mode is below 10 dB, while maximum amplitude and phase imbalances are 0.2 dB and 1.8 degrees, respectively. The single-path mode shows a measured gain of > 7.8 dB, and a port-to-port isolation > 35 dB. The measured NF is below 12 dB from 8 to 26 GHz. In addition, the proposed circuit shows the maximum output 1-dB compression point (OP1dB) of 4.6 dBm, and good matching characteristics, with a DC power consumption of 120 mW. The chip area of the reconfigurable two-way SiGe bi-directional active power divider/combiner is 1.43 mm × 0.92 mm.https://ieeexplore.ieee.org/document/8943985/Active power divider/combinerbi-directional amplifier (BDA)octave bandwidthphased array antennareconfigurableSiGe |
| spellingShingle | Moon-Kyu Cho Ickhyun Song John D. Cressler A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width IEEE Access Active power divider/combiner bi-directional amplifier (BDA) octave bandwidth phased array antenna reconfigurable SiGe |
| title | A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width |
| title_full | A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width |
| title_fullStr | A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width |
| title_full_unstemmed | A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width |
| title_short | A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width |
| title_sort | two way wideband active sige bicmos power divider combiner for reconfigurable phased arrays with controllable beam width |
| topic | Active power divider/combiner bi-directional amplifier (BDA) octave bandwidth phased array antenna reconfigurable SiGe |
| url | https://ieeexplore.ieee.org/document/8943985/ |
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