The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
The global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study in...
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Format: | Article |
Language: | English |
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MDPI AG
2022-09-01
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Series: | Micromachines |
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Online Access: | https://www.mdpi.com/2072-666X/13/10/1556 |
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author | Jong-Chang Woo Doo-Seung Um |
author_facet | Jong-Chang Woo Doo-Seung Um |
author_sort | Jong-Chang Woo |
collection | DOAJ |
description | The global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study introduces the change in light reflectance following the process conditions of plasma etching as a texturing process to increase the efficiency of photovoltaic cells. Isotropic etching was induced through plasma using SF<sub>6</sub> gas, and the etch profile was modulated by adding O<sub>2</sub> gas to reduce light reflectance. A high etch rate produces high surface roughness, which results in low surface reflectance properties. The inverse moth-eye structure was implemented using a square PR pattern arranged diagonally and showed the minimum reflectance in visible light at a tip spacing of 1 μm. This study can be applied to the development of higher-efficiency optical devices. |
first_indexed | 2024-03-09T19:47:45Z |
format | Article |
id | doaj.art-e02d44bf3f9744b4a72b59b92fd61975 |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-09T19:47:45Z |
publishDate | 2022-09-01 |
publisher | MDPI AG |
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series | Micromachines |
spelling | doaj.art-e02d44bf3f9744b4a72b59b92fd619752023-11-24T01:20:33ZengMDPI AGMicromachines2072-666X2022-09-011310155610.3390/mi13101556The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching ConditionsJong-Chang Woo0Doo-Seung Um1Department of Semiconductor Process Equipment, Semiconductor Convergence Campus of Korea Polytechnic, Anseong-si 17550, KoreaDepartment of Electrical Engineering, Sejong University, Seoul 05006, KoreaThe global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study introduces the change in light reflectance following the process conditions of plasma etching as a texturing process to increase the efficiency of photovoltaic cells. Isotropic etching was induced through plasma using SF<sub>6</sub> gas, and the etch profile was modulated by adding O<sub>2</sub> gas to reduce light reflectance. A high etch rate produces high surface roughness, which results in low surface reflectance properties. The inverse moth-eye structure was implemented using a square PR pattern arranged diagonally and showed the minimum reflectance in visible light at a tip spacing of 1 μm. This study can be applied to the development of higher-efficiency optical devices.https://www.mdpi.com/2072-666X/13/10/1556photovoltaic efficiencyplasma etchingsurface roughnessreflectancetexturinginverse moth-eye structure |
spellingShingle | Jong-Chang Woo Doo-Seung Um The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions Micromachines photovoltaic efficiency plasma etching surface roughness reflectance texturing inverse moth-eye structure |
title | The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions |
title_full | The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions |
title_fullStr | The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions |
title_full_unstemmed | The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions |
title_short | The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions |
title_sort | reflectance characteristics of an inverse moth eye structure in a silicon substrate depending on sf sub 6 sub o sub 2 sub plasma etching conditions |
topic | photovoltaic efficiency plasma etching surface roughness reflectance texturing inverse moth-eye structure |
url | https://www.mdpi.com/2072-666X/13/10/1556 |
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