The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions

The global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study in...

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Main Authors: Jong-Chang Woo, Doo-Seung Um
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/10/1556
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author Jong-Chang Woo
Doo-Seung Um
author_facet Jong-Chang Woo
Doo-Seung Um
author_sort Jong-Chang Woo
collection DOAJ
description The global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study introduces the change in light reflectance following the process conditions of plasma etching as a texturing process to increase the efficiency of photovoltaic cells. Isotropic etching was induced through plasma using SF<sub>6</sub> gas, and the etch profile was modulated by adding O<sub>2</sub> gas to reduce light reflectance. A high etch rate produces high surface roughness, which results in low surface reflectance properties. The inverse moth-eye structure was implemented using a square PR pattern arranged diagonally and showed the minimum reflectance in visible light at a tip spacing of 1 μm. This study can be applied to the development of higher-efficiency optical devices.
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spelling doaj.art-e02d44bf3f9744b4a72b59b92fd619752023-11-24T01:20:33ZengMDPI AGMicromachines2072-666X2022-09-011310155610.3390/mi13101556The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching ConditionsJong-Chang Woo0Doo-Seung Um1Department of Semiconductor Process Equipment, Semiconductor Convergence Campus of Korea Polytechnic, Anseong-si 17550, KoreaDepartment of Electrical Engineering, Sejong University, Seoul 05006, KoreaThe global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducing light reflectance at their surfaces. This study introduces the change in light reflectance following the process conditions of plasma etching as a texturing process to increase the efficiency of photovoltaic cells. Isotropic etching was induced through plasma using SF<sub>6</sub> gas, and the etch profile was modulated by adding O<sub>2</sub> gas to reduce light reflectance. A high etch rate produces high surface roughness, which results in low surface reflectance properties. The inverse moth-eye structure was implemented using a square PR pattern arranged diagonally and showed the minimum reflectance in visible light at a tip spacing of 1 μm. This study can be applied to the development of higher-efficiency optical devices.https://www.mdpi.com/2072-666X/13/10/1556photovoltaic efficiencyplasma etchingsurface roughnessreflectancetexturinginverse moth-eye structure
spellingShingle Jong-Chang Woo
Doo-Seung Um
The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
Micromachines
photovoltaic efficiency
plasma etching
surface roughness
reflectance
texturing
inverse moth-eye structure
title The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
title_full The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
title_fullStr The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
title_full_unstemmed The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
title_short The Reflectance Characteristics of an Inverse Moth-Eye Structure in a Silicon Substrate Depending on SF<sub>6</sub>/O<sub>2</sub> Plasma Etching Conditions
title_sort reflectance characteristics of an inverse moth eye structure in a silicon substrate depending on sf sub 6 sub o sub 2 sub plasma etching conditions
topic photovoltaic efficiency
plasma etching
surface roughness
reflectance
texturing
inverse moth-eye structure
url https://www.mdpi.com/2072-666X/13/10/1556
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