Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector
Due to the favorable properties of two-dimensional materials such as SnS<sub>2,</sub> with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunabl...
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| Format: | Article |
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MDPI AG
2022-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/12/2068 |
| _version_ | 1797456256449904640 |
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| author | Seyedali Hosseini Azam Iraji zad Seyed Mohammad Mahdavi Ali Esfandiar |
| author_facet | Seyedali Hosseini Azam Iraji zad Seyed Mohammad Mahdavi Ali Esfandiar |
| author_sort | Seyedali Hosseini |
| collection | DOAJ |
| description | Due to the favorable properties of two-dimensional materials such as SnS<sub>2,</sub> with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS<sub>2</sub>/InSe Van der Waals heterostructure photodetector. SnS<sub>2</sub> crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS<sub>2</sub> and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 10<sup>8</sup> Jones up to 3.35 × 10<sup>9</sup> Jones by gate modulation from 0 V to +70 V. Light absorption and the charge carrier generation mechanism were studied by the Silvaco TCAD software and the results were confirmed by our experimental observations. The rather high responsivity and visible spectrum response makes the SnS<sub>2</sub>/InSe heterojunction a potential candidate for commercial visible image sensors. |
| first_indexed | 2024-03-09T16:05:37Z |
| format | Article |
| id | doaj.art-e0303b65bf264ab5bf902255344869bf |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T16:05:37Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-e0303b65bf264ab5bf902255344869bf2023-11-24T16:43:34ZengMDPI AGMicromachines2072-666X2022-11-011312206810.3390/mi13122068Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure PhotodetectorSeyedali Hosseini0Azam Iraji zad1Seyed Mohammad Mahdavi2Ali Esfandiar3Center for Nanoscience and Nanotechnology, Institute for Convergent Science and Technology, Sharif University of Technology, Tehran 11155-9161, IranCenter for Nanoscience and Nanotechnology, Institute for Convergent Science and Technology, Sharif University of Technology, Tehran 11155-9161, IranCenter for Nanoscience and Nanotechnology, Institute for Convergent Science and Technology, Sharif University of Technology, Tehran 11155-9161, IranDepartment of Physics, Sharif University of Technology, Tehran 11155-9161, IranDue to the favorable properties of two-dimensional materials such as SnS<sub>2,</sub> with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS<sub>2</sub>/InSe Van der Waals heterostructure photodetector. SnS<sub>2</sub> crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS<sub>2</sub> and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 10<sup>8</sup> Jones up to 3.35 × 10<sup>9</sup> Jones by gate modulation from 0 V to +70 V. Light absorption and the charge carrier generation mechanism were studied by the Silvaco TCAD software and the results were confirmed by our experimental observations. The rather high responsivity and visible spectrum response makes the SnS<sub>2</sub>/InSe heterojunction a potential candidate for commercial visible image sensors.https://www.mdpi.com/2072-666X/13/12/2068photodetectortwo-dimensional materialVan der Waals heterostructure |
| spellingShingle | Seyedali Hosseini Azam Iraji zad Seyed Mohammad Mahdavi Ali Esfandiar Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector Micromachines photodetector two-dimensional material Van der Waals heterostructure |
| title | Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector |
| title_full | Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector |
| title_fullStr | Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector |
| title_full_unstemmed | Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector |
| title_short | Tunable Gain SnS<sub>2</sub>/InSe Van der Waals Heterostructure Photodetector |
| title_sort | tunable gain sns sub 2 sub inse van der waals heterostructure photodetector |
| topic | photodetector two-dimensional material Van der Waals heterostructure |
| url | https://www.mdpi.com/2072-666X/13/12/2068 |
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