Predicting the strain-mediated topological phase transition in 3D cubic ThTaN3
The cubic ThTaN3 compound has long been known as a semiconductor with a band gap of approximately 1 eV, but its electronic properties remain largely unexplored. By using density functional theory, we find that the band gap of ThTaN3 is very sensitive to the hydrostatic pressure/strain. A Dirac cone...
| Päätekijät: | , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Julkaistu: |
Beilstein-Institut
2018-05-01
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| Sarja: | Beilstein Journal of Nanotechnology |
| Aiheet: | |
| Linkit: | https://doi.org/10.3762/bjnano.9.132 |