Temperature-dependent effect of modulation in graphene-supported metamaterials
We report on a novel effect of temperature-dependent modulation in graphene-supported metamaterials. The effect was observed during the theoretical analysis of a model graphene-supported electro-optical modulator having silicon dioxide (SiO _2 ) or hafnium dioxide (HfO _2 ) as a buffer dielectric la...
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IOP Publishing
2022-01-01
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Series: | New Journal of Physics |
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Online Access: | https://doi.org/10.1088/1367-2630/ac5dfa |
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author | Yevhenii M Morozov Anatoliy S Lapchuk Iryna S Protsak Andriy A Kryuchyn Ivan P Nevirkovets |
author_facet | Yevhenii M Morozov Anatoliy S Lapchuk Iryna S Protsak Andriy A Kryuchyn Ivan P Nevirkovets |
author_sort | Yevhenii M Morozov |
collection | DOAJ |
description | We report on a novel effect of temperature-dependent modulation in graphene-supported metamaterials. The effect was observed during the theoretical analysis of a model graphene-supported electro-optical modulator having silicon dioxide (SiO _2 ) or hafnium dioxide (HfO _2 ) as a buffer dielectric layer. Comparative analysis of the two materials showed that they provide approximately the same maximum values for transmission and reflection modulation depths. However, in the case of a HfO _2 buffer layer, a lower chemical potential of the graphene is required to achieve the maximum value. Moreover, theoretical calculations revealed that a lower gate voltage (up to 6.4 times) is required to be applied in the case of a HfO _2 layer to achieve the same graphene chemical potential. The graphene layer was found to possesses high absorption (due to the additional resonance excitation) for some values of chemical potential and this effect is extremely temperature dependent. The discovered modulation effect was demonstrated to further increase the transmission modulation depth for the simple model structure up to 2.7 times (from 18.4% to 50.1%), while for the reflection modulation depth, this enhancement was equal to 2.2 times (from 24.4% to 52.8%). The novel modulation effect could easily be adopted and applied over a wide range of metadevices which would serve as a quick booster for the development of related research areas. |
first_indexed | 2024-03-12T16:06:02Z |
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id | doaj.art-e06c6f6d0e024ae087aedb6691a341c6 |
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issn | 1367-2630 |
language | English |
last_indexed | 2024-03-12T16:06:02Z |
publishDate | 2022-01-01 |
publisher | IOP Publishing |
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series | New Journal of Physics |
spelling | doaj.art-e06c6f6d0e024ae087aedb6691a341c62023-08-09T14:22:25ZengIOP PublishingNew Journal of Physics1367-26302022-01-0124404300610.1088/1367-2630/ac5dfaTemperature-dependent effect of modulation in graphene-supported metamaterialsYevhenii M Morozov0https://orcid.org/0000-0001-9689-8641Anatoliy S Lapchuk1Iryna S Protsak2Andriy A Kryuchyn3Ivan P Nevirkovets4Biosensor Technologies, AIT-Austrian Institute of Technology , 3430 Tulln, Austria; Department of Optical Engineering, Institute for Information Recording of NAS of Ukraine , 03113 Kyiv, UkraineDepartment of Optical Engineering, Institute for Information Recording of NAS of Ukraine , 03113 Kyiv, UkraineDepartment of Biomedical Problems of Surface, Chuiko Institute of Surface Chemistry of NAS of Ukraine , 03164 Kyiv, UkraineDepartment of Optical Engineering, Institute for Information Recording of NAS of Ukraine , 03113 Kyiv, UkraineDepartment of Physics and Astronomy, Northwestern University , Evanston, IL 60208, United States of AmericaWe report on a novel effect of temperature-dependent modulation in graphene-supported metamaterials. The effect was observed during the theoretical analysis of a model graphene-supported electro-optical modulator having silicon dioxide (SiO _2 ) or hafnium dioxide (HfO _2 ) as a buffer dielectric layer. Comparative analysis of the two materials showed that they provide approximately the same maximum values for transmission and reflection modulation depths. However, in the case of a HfO _2 buffer layer, a lower chemical potential of the graphene is required to achieve the maximum value. Moreover, theoretical calculations revealed that a lower gate voltage (up to 6.4 times) is required to be applied in the case of a HfO _2 layer to achieve the same graphene chemical potential. The graphene layer was found to possesses high absorption (due to the additional resonance excitation) for some values of chemical potential and this effect is extremely temperature dependent. The discovered modulation effect was demonstrated to further increase the transmission modulation depth for the simple model structure up to 2.7 times (from 18.4% to 50.1%), while for the reflection modulation depth, this enhancement was equal to 2.2 times (from 24.4% to 52.8%). The novel modulation effect could easily be adopted and applied over a wide range of metadevices which would serve as a quick booster for the development of related research areas.https://doi.org/10.1088/1367-2630/ac5dfagraphenemetamaterialselectro-optical modulators/switchersmodulation depthtemperature dependencetheoretical analysis |
spellingShingle | Yevhenii M Morozov Anatoliy S Lapchuk Iryna S Protsak Andriy A Kryuchyn Ivan P Nevirkovets Temperature-dependent effect of modulation in graphene-supported metamaterials New Journal of Physics graphene metamaterials electro-optical modulators/switchers modulation depth temperature dependence theoretical analysis |
title | Temperature-dependent effect of modulation in graphene-supported metamaterials |
title_full | Temperature-dependent effect of modulation in graphene-supported metamaterials |
title_fullStr | Temperature-dependent effect of modulation in graphene-supported metamaterials |
title_full_unstemmed | Temperature-dependent effect of modulation in graphene-supported metamaterials |
title_short | Temperature-dependent effect of modulation in graphene-supported metamaterials |
title_sort | temperature dependent effect of modulation in graphene supported metamaterials |
topic | graphene metamaterials electro-optical modulators/switchers modulation depth temperature dependence theoretical analysis |
url | https://doi.org/10.1088/1367-2630/ac5dfa |
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