Enhancing functionalities of atomically thin semiconductors with plasmonic nanostructures
Atomically thin, two-dimensional, transition-metal dichalcogenide (TMD) monolayers have recently emerged as a versatile platform for optoelectronics. Their appeal stems from a tunable direct bandgap in the visible and near-infrared regions, the ability to enable strong coupling to light, and the uni...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2019-03-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2018-0185 |
| Summary: | Atomically thin, two-dimensional, transition-metal dichalcogenide (TMD) monolayers have recently emerged as a versatile platform for optoelectronics. Their appeal stems from a tunable direct bandgap in the visible and near-infrared regions, the ability to enable strong coupling to light, and the unique opportunity to address the valley degree of freedom over atomically thin layers. Additionally, monolayer TMDs can host defect-bound localized excitons that behave as single-photon emitters, opening exciting avenues for highly integrated 2D quantum photonic circuitry. By introducing plasmonic nanostructures and metasurfaces, one may effectively enhance light harvesting, direct valley-polarized emission, and route valley index. This review article focuses on these critical aspects to develop integrated photonic and valleytronic applications by exploiting exciton–plasmon coupling over a new hybrid material platform. |
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| ISSN: | 2192-8606 2192-8614 |