Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors
The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn<sub>k</sub>In<sub>2</sub&g...
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MDPI AG
2021-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/1/198 |
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| author | Javier García-Fernández Almudena Torres-Pardo Julio Ramírez-Castellanos Marta D. Rossell José M. González-Calbet |
| author_facet | Javier García-Fernández Almudena Torres-Pardo Julio Ramírez-Castellanos Marta D. Rossell José M. González-Calbet |
| author_sort | Javier García-Fernández |
| collection | DOAJ |
| description | The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the <i>k</i> value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of <i>k</i> is discussed, even in the lowest term of the series (<i>k</i> = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In<sup>3+</sup> are evaluated. |
| first_indexed | 2024-03-09T04:46:23Z |
| format | Article |
| id | doaj.art-e09ef125a1ff4ea2873f6f730d059f3e |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T04:46:23Z |
| publishDate | 2021-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-e09ef125a1ff4ea2873f6f730d059f3e2023-12-03T13:15:22ZengMDPI AGNanomaterials2079-49912021-01-0111119810.3390/nano11010198Evaluation of the Nanodomain Structure in In-Zn-O Transparent ConductorsJavier García-Fernández0Almudena Torres-Pardo1Julio Ramírez-Castellanos2Marta D. Rossell3José M. González-Calbet4Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, SpainInorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, SpainInorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, SpainElectron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, SwitzerlandInorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, SpainThe optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the <i>k</i> value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of <i>k</i> is discussed, even in the lowest term of the series (<i>k</i> = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In<sup>3+</sup> are evaluated.https://www.mdpi.com/2079-4991/11/1/198nano-characterization(Cs)-corrected electron microscopygeometric phase analysisZn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> homologous series |
| spellingShingle | Javier García-Fernández Almudena Torres-Pardo Julio Ramírez-Castellanos Marta D. Rossell José M. González-Calbet Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors Nanomaterials nano-characterization (Cs)-corrected electron microscopy geometric phase analysis Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> homologous series |
| title | Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors |
| title_full | Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors |
| title_fullStr | Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors |
| title_full_unstemmed | Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors |
| title_short | Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors |
| title_sort | evaluation of the nanodomain structure in in zn o transparent conductors |
| topic | nano-characterization (Cs)-corrected electron microscopy geometric phase analysis Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> homologous series |
| url | https://www.mdpi.com/2079-4991/11/1/198 |
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