The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thorou...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-01-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/12/3/322 |
_version_ | 1797485924883365888 |
---|---|
author | Daniel Vaquero Juan Salvador-Sánchez Vito Clericò Enrique Diez Jorge Quereda |
author_facet | Daniel Vaquero Juan Salvador-Sánchez Vito Clericò Enrique Diez Jorge Quereda |
author_sort | Daniel Vaquero |
collection | DOAJ |
description | Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe<sub>2</sub> via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe<sub>2</sub>. |
first_indexed | 2024-03-09T23:25:48Z |
format | Article |
id | doaj.art-e0e500ace01e40f1bb7466cef022c5e8 |
institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-09T23:25:48Z |
publishDate | 2022-01-01 |
publisher | MDPI AG |
record_format | Article |
series | Nanomaterials |
spelling | doaj.art-e0e500ace01e40f1bb7466cef022c5e82023-11-23T17:18:50ZengMDPI AGNanomaterials2079-49912022-01-0112332210.3390/nano12030322The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage DependenceDaniel Vaquero0Juan Salvador-Sánchez1Vito Clericò2Enrique Diez3Jorge Quereda4Nanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainTwo-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe<sub>2</sub> via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe<sub>2</sub>.https://www.mdpi.com/2079-4991/12/3/322excitonstransition metal dichalcogenidesphotocurrent spectroscopy |
spellingShingle | Daniel Vaquero Juan Salvador-Sánchez Vito Clericò Enrique Diez Jorge Quereda The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence Nanomaterials excitons transition metal dichalcogenides photocurrent spectroscopy |
title | The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence |
title_full | The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence |
title_fullStr | The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence |
title_full_unstemmed | The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence |
title_short | The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence |
title_sort | low temperature photocurrent spectrum of monolayer mose sub 2 sub excitonic features and gate voltage dependence |
topic | excitons transition metal dichalcogenides photocurrent spectroscopy |
url | https://www.mdpi.com/2079-4991/12/3/322 |
work_keys_str_mv | AT danielvaquero thelowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT juansalvadorsanchez thelowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT vitoclerico thelowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT enriquediez thelowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT jorgequereda thelowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT danielvaquero lowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT juansalvadorsanchez lowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT vitoclerico lowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT enriquediez lowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence AT jorgequereda lowtemperaturephotocurrentspectrumofmonolayermosesub2subexcitonicfeaturesandgatevoltagedependence |