The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence

Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thorou...

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Main Authors: Daniel Vaquero, Juan Salvador-Sánchez, Vito Clericò, Enrique Diez, Jorge Quereda
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/3/322
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author Daniel Vaquero
Juan Salvador-Sánchez
Vito Clericò
Enrique Diez
Jorge Quereda
author_facet Daniel Vaquero
Juan Salvador-Sánchez
Vito Clericò
Enrique Diez
Jorge Quereda
author_sort Daniel Vaquero
collection DOAJ
description Two-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe<sub>2</sub> via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe<sub>2</sub>.
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spelling doaj.art-e0e500ace01e40f1bb7466cef022c5e82023-11-23T17:18:50ZengMDPI AGNanomaterials2079-49912022-01-0112332210.3390/nano12030322The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage DependenceDaniel Vaquero0Juan Salvador-Sánchez1Vito Clericò2Enrique Diez3Jorge Quereda4Nanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainNanotechnology Group, USAL—Nanolab, Universidad de Salamanca, E-37008 Salamanca, SpainTwo-dimensional transition metal dichalcogenides (2D-TMDs) are among the most promising materials for exploring and exploiting exciton transitions. Excitons in 2D-TMDs present remarkably long lifetimes, even at room temperature. The spectral response of exciton transitions in 2D-TMDs has been thoroughly characterized over the past decade by means of photoluminescence spectroscopy, transmittance spectroscopy, and related techniques; however, the spectral dependence of their electronic response is still not fully characterized. In this work, we investigate the electronic response of exciton transitions in monolayer MoSe<sub>2</sub> via low-temperature photocurrent spectroscopy. We identify the spectral features associated with the main exciton and trion transitions, with spectral bandwidths down to 15 meV. We also investigate the effect of the Fermi level on the position and intensity of excitonic spectral features, observing a very strong modulation of the photocurrent, which even undergoes a change in sign when the Fermi level crosses the charge neutrality point. Our results demonstrate the unexploited potential of low-temperature photocurrent spectroscopy for studying excitons in low-dimensional materials, and provide new insight into excitonic transitions in 1L-MoSe<sub>2</sub>.https://www.mdpi.com/2079-4991/12/3/322excitonstransition metal dichalcogenidesphotocurrent spectroscopy
spellingShingle Daniel Vaquero
Juan Salvador-Sánchez
Vito Clericò
Enrique Diez
Jorge Quereda
The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
Nanomaterials
excitons
transition metal dichalcogenides
photocurrent spectroscopy
title The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
title_full The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
title_fullStr The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
title_full_unstemmed The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
title_short The Low-Temperature Photocurrent Spectrum of Monolayer MoSe<sub>2</sub>: Excitonic Features and Gate Voltage Dependence
title_sort low temperature photocurrent spectrum of monolayer mose sub 2 sub excitonic features and gate voltage dependence
topic excitons
transition metal dichalcogenides
photocurrent spectroscopy
url https://www.mdpi.com/2079-4991/12/3/322
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