Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures were successfully created using technique known as plasma-assisted molecular beam epitaxy (MBE) on silicon substrate. Gallium (...

Полное описание

Библиографические подробности
Главные авторы: Ho Xin Jing, Che Azurahanim Che Abdullah, Mohd Zaki Mohd Yusoff, Azzafeerah Mahyuddin, Zainuriah Hassan
Формат: Статья
Язык:English
Опубликовано: Elsevier 2019-03-01
Серии:Results in Physics
Online-ссылка:http://www.sciencedirect.com/science/article/pii/S2211379718311793

Internet

http://www.sciencedirect.com/science/article/pii/S2211379718311793

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