A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques
Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as l...
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MDPI AG
2023-09-01
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author | Esther Tamilarasan Gracia Nirmala Rani Duraisamy Muthu Kumaran Elangovan Arun Samuel Thankmony Sarasam |
author_facet | Esther Tamilarasan Gracia Nirmala Rani Duraisamy Muthu Kumaran Elangovan Arun Samuel Thankmony Sarasam |
author_sort | Esther Tamilarasan |
collection | DOAJ |
description | Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as low reliability, high power consumption, and large size. A conventional AFE device uses more analog-to-digital converters, amplifiers, and filters for individual electrodes. Our proposed MUX-based AFE design requires fewer components than a conventional AFE device, reducing power consumption and area. It includes a single-ended differential feedback operational transconductance amplifier (OTA) and n-pass MUX-based AFE circuits which are related to the emergence of low power, low area, and low cost AFE-integrated chips that are required for wearable biomedical applications. The proposed 6T n-pass multiplexer measures a gain of −68 dB across a frequency range of 100 kHz with a 136.5 nW power consumption and a delay of 0.07 ns. The design layout area is approximately 9.8 µm<sup>2</sup> and uses 45 nm complementary metal oxide semiconductor (CMOS) technology. Additionally, the proposed single-ended differential OTA has an obtained input referred noise of 0.014 µV<sub>rms</sub>, and a gain of −5.5 dB, while the design layout area is about 2 µm<sup>2</sup> and was designed with the help of the Cadence Virtuoso layout design tool. |
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issn | 2072-666X |
language | English |
last_indexed | 2024-03-10T21:03:03Z |
publishDate | 2023-09-01 |
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series | Micromachines |
spelling | doaj.art-e12ea7b35240400b823f64cdb63d34f42023-11-19T17:23:13ZengMDPI AGMicromachines2072-666X2023-09-011410181610.3390/mi14101816A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS TechniquesEsther Tamilarasan0Gracia Nirmala Rani Duraisamy1Muthu Kumaran Elangovan2Arun Samuel Thankmony Sarasam3Department of Electronics and Communication, Thigarajar College of Engineering, Madurai 625005, Tamil Nadu, IndiaDepartment of Electronics and Communication, Thigarajar College of Engineering, Madurai 625005, Tamil Nadu, IndiaEngineering, D.R.B.R. Ambedkar Institute of Technology, Port Blair 744101, Union Territory of Andaman & Nicobar Islands, IndiaDepartment of Electronics and Communication , National Engineering College, Kovilpatti 628503, Tamil Nadu, IndiaWearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as low reliability, high power consumption, and large size. A conventional AFE device uses more analog-to-digital converters, amplifiers, and filters for individual electrodes. Our proposed MUX-based AFE design requires fewer components than a conventional AFE device, reducing power consumption and area. It includes a single-ended differential feedback operational transconductance amplifier (OTA) and n-pass MUX-based AFE circuits which are related to the emergence of low power, low area, and low cost AFE-integrated chips that are required for wearable biomedical applications. The proposed 6T n-pass multiplexer measures a gain of −68 dB across a frequency range of 100 kHz with a 136.5 nW power consumption and a delay of 0.07 ns. The design layout area is approximately 9.8 µm<sup>2</sup> and uses 45 nm complementary metal oxide semiconductor (CMOS) technology. Additionally, the proposed single-ended differential OTA has an obtained input referred noise of 0.014 µV<sub>rms</sub>, and a gain of −5.5 dB, while the design layout area is about 2 µm<sup>2</sup> and was designed with the help of the Cadence Virtuoso layout design tool.https://www.mdpi.com/2072-666X/14/10/1816wearable medical devices (WMD)analog front end (AFE)operational transconductance amplifieranalog multiplexerCMOSCadence Virtuoso |
spellingShingle | Esther Tamilarasan Gracia Nirmala Rani Duraisamy Muthu Kumaran Elangovan Arun Samuel Thankmony Sarasam A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques Micromachines wearable medical devices (WMD) analog front end (AFE) operational transconductance amplifier analog multiplexer CMOS Cadence Virtuoso |
title | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_full | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_fullStr | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_full_unstemmed | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_short | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_sort | 0 8 v 14 76 nvrms multiplexer based afe for wearable devices using 45 nm cmos techniques |
topic | wearable medical devices (WMD) analog front end (AFE) operational transconductance amplifier analog multiplexer CMOS Cadence Virtuoso |
url | https://www.mdpi.com/2072-666X/14/10/1816 |
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