Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets
Abstract Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p‐...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2019-08-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.201900314 |
| _version_ | 1811288635865038848 |
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| author | Yejing Dai Changsheng Wu Zhiyi Wu Zhihao Zhao Li Li Yang Lu Zhong Lin Wang |
| author_facet | Yejing Dai Changsheng Wu Zhiyi Wu Zhihao Zhao Li Li Yang Lu Zhong Lin Wang |
| author_sort | Yejing Dai |
| collection | DOAJ |
| description | Abstract Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p‐Si/V‐doped‐ferroelectric‐ZnO 2D nanosheets (FESZ‐PD) is fabricated, and the ferroelectricity‐enhanced piezo‐phototronic effect on the photoresponse behavior of the FESZ‐PD is carefully investigated. By introducing the ferroelectricity and the piezo‐phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo‐phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain‐free conditions, the photoresponsivity R of the FESZ‐PD increases by 2.4 times when applying a −0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo‐phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high‐performance electronic and optoelectronic devices. |
| first_indexed | 2024-04-13T03:40:47Z |
| format | Article |
| id | doaj.art-e14df6e8a9474ac680c174aa905df5ed |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-13T03:40:47Z |
| publishDate | 2019-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-e14df6e8a9474ac680c174aa905df5ed2022-12-22T03:04:11ZengWileyAdvanced Science2198-38442019-08-01616n/an/a10.1002/advs.201900314Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO NanosheetsYejing Dai0Changsheng Wu1Zhiyi Wu2Zhihao Zhao3Li Li4Yang Lu5Zhong Lin Wang6School of Materials Sun Yat‐sen University Guangzhou 510275 ChinaSchool of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USASchool of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USASchool of Materials Sun Yat‐sen University Guangzhou 510275 ChinaKey Laboratory of Advanced Ceramics and Machining Technology Ministry of Education School of Materials Science and Engineering Tianjin University Tianjin 300072 ChinaKey Laboratory of Advanced Ceramics and Machining Technology Ministry of Education School of Materials Science and Engineering Tianjin University Tianjin 300072 ChinaSchool of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USAAbstract Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo‐phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p‐Si/V‐doped‐ferroelectric‐ZnO 2D nanosheets (FESZ‐PD) is fabricated, and the ferroelectricity‐enhanced piezo‐phototronic effect on the photoresponse behavior of the FESZ‐PD is carefully investigated. By introducing the ferroelectricity and the piezo‐phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo‐phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain‐free conditions, the photoresponsivity R of the FESZ‐PD increases by 2.4 times when applying a −0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo‐phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high‐performance electronic and optoelectronic devices.https://doi.org/10.1002/advs.201900314coupling effectferroelectricityphotodetectorspiezo‐phototronic effectZnO nanosheets |
| spellingShingle | Yejing Dai Changsheng Wu Zhiyi Wu Zhihao Zhao Li Li Yang Lu Zhong Lin Wang Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets Advanced Science coupling effect ferroelectricity photodetectors piezo‐phototronic effect ZnO nanosheets |
| title | Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets |
| title_full | Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets |
| title_fullStr | Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets |
| title_full_unstemmed | Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets |
| title_short | Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets |
| title_sort | ferroelectricity enhanced piezo phototronic effect in 2d v doped zno nanosheets |
| topic | coupling effect ferroelectricity photodetectors piezo‐phototronic effect ZnO nanosheets |
| url | https://doi.org/10.1002/advs.201900314 |
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