Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming
To improve the turn-off speed and uniformity of atomic threshold switching (TS) devices, we propose the use of the AgSe electrode and controlled bipolar pulse forming method. Compared with TS devices with Ag and AgTe electrodes, TS device with the AgSe electrode shows an extremely fast turn-off spee...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9548680/ |
| _version_ | 1818715493512511488 |
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| author | Seungyeol Oh Seungwoo Lee Hyunsang Hwang |
| author_facet | Seungyeol Oh Seungwoo Lee Hyunsang Hwang |
| author_sort | Seungyeol Oh |
| collection | DOAJ |
| description | To improve the turn-off speed and uniformity of atomic threshold switching (TS) devices, we propose the use of the AgSe electrode and controlled bipolar pulse forming method. Compared with TS devices with Ag and AgTe electrodes, TS device with the AgSe electrode shows an extremely fast turn-off speed, which can be explained by the limited injection of Ag into the switching layer. By applying positive bias (I<sub>cc</sub> = 500 nA, 1 ms) followed by negative bias (−0.1 to −0.2 V, <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{s}$ </tex-math></inline-formula>), the TS device exhibits excellent switching uniformity. It can be explained by the formation of atomic-scale filament under the positive bias at low I<sub>cc</sub> and drift-back of excessive Ag by the negative bias. By designing the shape of the filament and concentration of the residual Ag, the TS device with the AgSe electrode shows promise for selector applications. |
| first_indexed | 2024-12-17T19:04:14Z |
| format | Article |
| id | doaj.art-e1a7df8a1f1b4d2e9cf128a12adca9a4 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-17T19:04:14Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-e1a7df8a1f1b4d2e9cf128a12adca9a42022-12-21T21:36:02ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01986486710.1109/JEDS.2021.31155209548680Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse FormingSeungyeol Oh0https://orcid.org/0000-0002-6848-0229Seungwoo Lee1Hyunsang Hwang2https://orcid.org/0000-0003-1930-1914Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of KoreaTo improve the turn-off speed and uniformity of atomic threshold switching (TS) devices, we propose the use of the AgSe electrode and controlled bipolar pulse forming method. Compared with TS devices with Ag and AgTe electrodes, TS device with the AgSe electrode shows an extremely fast turn-off speed, which can be explained by the limited injection of Ag into the switching layer. By applying positive bias (I<sub>cc</sub> = 500 nA, 1 ms) followed by negative bias (−0.1 to −0.2 V, <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{s}$ </tex-math></inline-formula>), the TS device exhibits excellent switching uniformity. It can be explained by the formation of atomic-scale filament under the positive bias at low I<sub>cc</sub> and drift-back of excessive Ag by the negative bias. By designing the shape of the filament and concentration of the residual Ag, the TS device with the AgSe electrode shows promise for selector applications.https://ieeexplore.ieee.org/document/9548680/AgSeTSturn-off speeduniformity |
| spellingShingle | Seungyeol Oh Seungwoo Lee Hyunsang Hwang Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming IEEE Journal of the Electron Devices Society AgSe TS turn-off speed uniformity |
| title | Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming |
| title_full | Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming |
| title_fullStr | Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming |
| title_full_unstemmed | Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming |
| title_short | Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming |
| title_sort | improved turn off speed and uniformity of atomic threshold switch device by agse electrode and bipolar pulse forming |
| topic | AgSe TS turn-off speed uniformity |
| url | https://ieeexplore.ieee.org/document/9548680/ |
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