Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes
Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the <i>I</i>–<i>V</i> characterist...
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| Format: | Article |
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MDPI AG
2022-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/5/800 |
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| author | Julio C. Tinoco Samuel A. Hernandez María de la Luz Olvera Magali Estrada Rodolfo García Andrea G. Martinez-Lopez |
| author_facet | Julio C. Tinoco Samuel A. Hernandez María de la Luz Olvera Magali Estrada Rodolfo García Andrea G. Martinez-Lopez |
| author_sort | Julio C. Tinoco |
| collection | DOAJ |
| description | Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the <i>I</i>–<i>V</i> characteristic of solution processed, ZnO Schottky barrier diodes, fabricated at a low temperature. It is shown that the use of standard extraction methods to determine diode parameters in these devices produce significant dispersion of the ideality factor with values from 2.2 to 4.1, as well as a dependence on the diode area without physical meaning. The analysis of simulated <i>I</i>–<i>V</i> characteristic of LTP-SBD, and its comparison with experimental measurements, confirmed that it is necessary to consider the presence of a density of states (DOS) in the semiconductor gap, to understand specific changes observed in their performance, with respect to standard SBDs. These changes include increased values of <i>Rs</i>, as well as its dependence on bias, an important reduction of the diode current and small rectification values (<i>RR</i>). Additionally, it is shown that the standard extraction methodologies cannot be used to obtain diode parameters of LTP-SBD, as it is necessary to develop adequate parameter extraction methodologies for them. |
| first_indexed | 2024-03-10T03:24:31Z |
| format | Article |
| id | doaj.art-e1c68dcc4cdd4f349cc98111dbf437af |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T03:24:31Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-e1c68dcc4cdd4f349cc98111dbf437af2023-11-23T12:13:25ZengMDPI AGMicromachines2072-666X2022-05-0113580010.3390/mi13050800Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier DiodesJulio C. Tinoco0Samuel A. Hernandez1María de la Luz Olvera2Magali Estrada3Rodolfo García4Andrea G. Martinez-Lopez5Micro and Nanotechnology Research Centre (MICRONA), Universidad Veracruzana, Veracruz 94294, MexicoMicro and Nanotechnology Research Centre (MICRONA), Universidad Veracruzana, Veracruz 94294, MexicoSolid-State Electronics Section, Electrical Engineering Department, CINVESTAV-IPN, Mexico City 07360, MexicoSolid-State Electronics Section, Electrical Engineering Department, CINVESTAV-IPN, Mexico City 07360, MexicoUniversity Center UAEM Ecatepec, Universidad Autónoma del Estado de México, Ecatepec de Morelos 55020, MexicoMicro and Nanotechnology Research Centre (MICRONA), Universidad Veracruzana, Veracruz 94294, MexicoSchottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the <i>I</i>–<i>V</i> characteristic of solution processed, ZnO Schottky barrier diodes, fabricated at a low temperature. It is shown that the use of standard extraction methods to determine diode parameters in these devices produce significant dispersion of the ideality factor with values from 2.2 to 4.1, as well as a dependence on the diode area without physical meaning. The analysis of simulated <i>I</i>–<i>V</i> characteristic of LTP-SBD, and its comparison with experimental measurements, confirmed that it is necessary to consider the presence of a density of states (DOS) in the semiconductor gap, to understand specific changes observed in their performance, with respect to standard SBDs. These changes include increased values of <i>Rs</i>, as well as its dependence on bias, an important reduction of the diode current and small rectification values (<i>RR</i>). Additionally, it is shown that the standard extraction methodologies cannot be used to obtain diode parameters of LTP-SBD, as it is necessary to develop adequate parameter extraction methodologies for them.https://www.mdpi.com/2072-666X/13/5/800zinc oxide filmssolution-processing electronicsSchottky barrier diodessemiconductor defects |
| spellingShingle | Julio C. Tinoco Samuel A. Hernandez María de la Luz Olvera Magali Estrada Rodolfo García Andrea G. Martinez-Lopez Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes Micromachines zinc oxide films solution-processing electronics Schottky barrier diodes semiconductor defects |
| title | Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes |
| title_full | Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes |
| title_fullStr | Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes |
| title_full_unstemmed | Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes |
| title_short | Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes |
| title_sort | impact of the semiconductor defect density on solution processed flexible schottky barrier diodes |
| topic | zinc oxide films solution-processing electronics Schottky barrier diodes semiconductor defects |
| url | https://www.mdpi.com/2072-666X/13/5/800 |
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