A highly integrated nonvolatile bidirectional RFET with low leakage current
A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
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| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023065064 |
| _version_ | 1797669934312980480 |
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| author | Xi Liu Mengmeng Li Shouqiang Zhang Xiaoshi Jin |
| author_facet | Xi Liu Mengmeng Li Shouqiang Zhang Xiaoshi Jin |
| author_sort | Xi Liu |
| collection | DOAJ |
| description | A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail. |
| first_indexed | 2024-03-11T20:52:12Z |
| format | Article |
| id | doaj.art-e1d43494091e4bb2a87ded3b2d4acc2c |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-03-11T20:52:12Z |
| publishDate | 2023-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-e1d43494091e4bb2a87ded3b2d4acc2c2023-10-01T05:59:07ZengElsevierHeliyon2405-84402023-09-0199e19298A highly integrated nonvolatile bidirectional RFET with low leakage currentXi Liu0Mengmeng Li1Shouqiang Zhang2Xiaoshi Jin3School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China; Corresponding author.School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, ChinaA highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.http://www.sciencedirect.com/science/article/pii/S2405844023065064Reconfigurable FETsBidirectionalNonvolatileLow leakage |
| spellingShingle | Xi Liu Mengmeng Li Shouqiang Zhang Xiaoshi Jin A highly integrated nonvolatile bidirectional RFET with low leakage current Heliyon Reconfigurable FETs Bidirectional Nonvolatile Low leakage |
| title | A highly integrated nonvolatile bidirectional RFET with low leakage current |
| title_full | A highly integrated nonvolatile bidirectional RFET with low leakage current |
| title_fullStr | A highly integrated nonvolatile bidirectional RFET with low leakage current |
| title_full_unstemmed | A highly integrated nonvolatile bidirectional RFET with low leakage current |
| title_short | A highly integrated nonvolatile bidirectional RFET with low leakage current |
| title_sort | highly integrated nonvolatile bidirectional rfet with low leakage current |
| topic | Reconfigurable FETs Bidirectional Nonvolatile Low leakage |
| url | http://www.sciencedirect.com/science/article/pii/S2405844023065064 |
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