Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amp...

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Main Authors: Md Hasibul Alam, Zifan Xu, Sayema Chowdhury, Zhanzhi Jiang, Deepyanti Taneja, Sanjay K. Banerjee, Keji Lai, Maria Helena Braga, Deji Akinwande
Format: Article
Language:English
Published: Nature Portfolio 2020-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-17006-w
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author Md Hasibul Alam
Zifan Xu
Sayema Chowdhury
Zhanzhi Jiang
Deepyanti Taneja
Sanjay K. Banerjee
Keji Lai
Maria Helena Braga
Deji Akinwande
author_facet Md Hasibul Alam
Zifan Xu
Sayema Chowdhury
Zhanzhi Jiang
Deepyanti Taneja
Sanjay K. Banerjee
Keji Lai
Maria Helena Braga
Deji Akinwande
author_sort Md Hasibul Alam
collection DOAJ
description Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amplifier gain of 34 with 1 V supply.
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spelling doaj.art-e2235d8f8bfd4573a7d4996861da6dd02022-12-21T20:34:27ZengNature PortfolioNature Communications2041-17232020-06-011111910.1038/s41467-020-17006-wLithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiersMd Hasibul Alam0Zifan Xu1Sayema Chowdhury2Zhanzhi Jiang3Deepyanti Taneja4Sanjay K. Banerjee5Keji Lai6Maria Helena Braga7Deji Akinwande8Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of TexasDepartment of Physics, The University of TexasMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of TexasDepartment of Physics, The University of TexasMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of TexasMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of TexasDepartment of Physics, The University of TexasLAETA, Engineering Physics Department, Engineering Faculty, University of PortoMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of TexasElectrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching the ideal limit of 60 mV/dec and complementary amplifier gain of 34 with 1 V supply.https://doi.org/10.1038/s41467-020-17006-w
spellingShingle Md Hasibul Alam
Zifan Xu
Sayema Chowdhury
Zhanzhi Jiang
Deepyanti Taneja
Sanjay K. Banerjee
Keji Lai
Maria Helena Braga
Deji Akinwande
Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
Nature Communications
title Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_full Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_fullStr Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_full_unstemmed Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_short Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
title_sort lithium ion electrolytic substrates for sub 1v high performance transition metal dichalcogenide transistors and amplifiers
url https://doi.org/10.1038/s41467-020-17006-w
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