A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation
In this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, p...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/13/13/7892 |
| _version_ | 1797592094150230016 |
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| author | Youngtae Park Hyunbum Park |
| author_facet | Youngtae Park Hyunbum Park |
| author_sort | Youngtae Park |
| collection | DOAJ |
| description | In this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, polishing process technology for large-diameter GaAs substrates is developed. Simulation data were used to carry out experiments to determine the optimum temperature conditions. As a result of the defect analysis, the final manufacturing result is found to have excellent thickness variations. This presents the validity of the manufacturing process developed in this work. |
| first_indexed | 2024-03-11T01:46:35Z |
| format | Article |
| id | doaj.art-e22f54b4ef974f8581d0020b572422c9 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-11T01:46:35Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-e22f54b4ef974f8581d0020b572422c92023-11-18T16:12:56ZengMDPI AGApplied Sciences2076-34172023-07-011313789210.3390/app13137892A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature SimulationYoungtae Park0Hyunbum Park1IOG Semiconductor, Inc., KETI #413, 111, Ballyong-ro, Deokjin-gu, Jeonju 54853, Republic of KoreaDepartment of Mechanical Engineering, Kunsan National University, 558 Daehak-ro, Miryong-dong, Gunsan 54150, Republic of KoreaIn this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, polishing process technology for large-diameter GaAs substrates is developed. Simulation data were used to carry out experiments to determine the optimum temperature conditions. As a result of the defect analysis, the final manufacturing result is found to have excellent thickness variations. This presents the validity of the manufacturing process developed in this work.https://www.mdpi.com/2076-3417/13/13/7892GaAscrystalingotnumerical analysisvertical gradient freeze (VGF) |
| spellingShingle | Youngtae Park Hyunbum Park A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation Applied Sciences GaAs crystal ingot numerical analysis vertical gradient freeze (VGF) |
| title | A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation |
| title_full | A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation |
| title_fullStr | A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation |
| title_full_unstemmed | A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation |
| title_short | A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation |
| title_sort | study on heater design for crystal growth of gaas ingot using growth temperature simulation |
| topic | GaAs crystal ingot numerical analysis vertical gradient freeze (VGF) |
| url | https://www.mdpi.com/2076-3417/13/13/7892 |
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