Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits

We live in a technologically advanced society where we all use semiconductor chips in the majority of our gadgets, and the basic criterion concerning data storage and memory is a small footprint and low power consumption. SRAM is a very important part of this and can be used to meet all the above cr...

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Bibliographic Details
Main Authors: G. Lakshmi Priya, Puneet Saran, Shikhar Kumar Padhy, Prateek Agarwal, A. Andrew Roobert, L. Jerart Julus
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Micromachines
Subjects:
sense amplifier
low power
SRAM
high speed
Modified Cross-Coupled
Online Access:https://www.mdpi.com/2072-666X/14/3/581

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https://www.mdpi.com/2072-666X/14/3/581

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