Study of Internal Stress in Conductive and Dielectric Thick Films
This paper is focused on the study of internal stress in thick films used in hybrid microelectronics. Internal stress in thick films arises after firing and during cooling due to the differing coefficients of thermal expansion in fired film and ceramic substrates. Different thermal expansions cause...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-12-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/23/8686 |
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| author | Jiri Hlina Jan Reboun Martin Janda Ales Hamacek |
| author_facet | Jiri Hlina Jan Reboun Martin Janda Ales Hamacek |
| author_sort | Jiri Hlina |
| collection | DOAJ |
| description | This paper is focused on the study of internal stress in thick films used in hybrid microelectronics. Internal stress in thick films arises after firing and during cooling due to the differing coefficients of thermal expansion in fired film and ceramic substrates. Different thermal expansions cause deflection of the substrate and in extreme cases, the deflection can lead to damage of the substrate. Two silver pastes and two dielectric pastes, as well as their combinations, were used for the experiments, and the internal stress in the thick films was investigated using the cantilever method. Further experiments were also focused on internal stress changes during the experiment and on the influence of heat treatment (annealing) on internal stress. The results were correlated with the morphology of the fired thick films. The internal stress in the thick films was in the range of 8 to 21 MPa for metallic films and in the range from 12 to 16 MPa for dielectric films. It was verified that the cantilever method can be successfully used for the evaluation of internal stress in thick films. It was also found that the values of deflection and internal stress are not stable after firing, and they can change over time, mainly for metallic thick films. |
| first_indexed | 2024-03-09T17:42:05Z |
| format | Article |
| id | doaj.art-e2711b8c496f47c788e310c04f44f8dd |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T17:42:05Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-e2711b8c496f47c788e310c04f44f8dd2023-11-24T11:32:27ZengMDPI AGMaterials1996-19442022-12-011523868610.3390/ma15238686Study of Internal Stress in Conductive and Dielectric Thick FilmsJiri Hlina0Jan Reboun1Martin Janda2Ales Hamacek3Department of Materials and Technology, Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 8, 301 00 Pilsen, Czech RepublicDepartment of Materials and Technology, Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 8, 301 00 Pilsen, Czech RepublicDepartment of Materials and Technology, Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 8, 301 00 Pilsen, Czech RepublicDepartment of Materials and Technology, Faculty of Electrical Engineering, University of West Bohemia, Univerzitni 8, 301 00 Pilsen, Czech RepublicThis paper is focused on the study of internal stress in thick films used in hybrid microelectronics. Internal stress in thick films arises after firing and during cooling due to the differing coefficients of thermal expansion in fired film and ceramic substrates. Different thermal expansions cause deflection of the substrate and in extreme cases, the deflection can lead to damage of the substrate. Two silver pastes and two dielectric pastes, as well as their combinations, were used for the experiments, and the internal stress in the thick films was investigated using the cantilever method. Further experiments were also focused on internal stress changes during the experiment and on the influence of heat treatment (annealing) on internal stress. The results were correlated with the morphology of the fired thick films. The internal stress in the thick films was in the range of 8 to 21 MPa for metallic films and in the range from 12 to 16 MPa for dielectric films. It was verified that the cantilever method can be successfully used for the evaluation of internal stress in thick films. It was also found that the values of deflection and internal stress are not stable after firing, and they can change over time, mainly for metallic thick films.https://www.mdpi.com/1996-1944/15/23/8686thick filmsilverdielectricinternal stressceramicscantilever method |
| spellingShingle | Jiri Hlina Jan Reboun Martin Janda Ales Hamacek Study of Internal Stress in Conductive and Dielectric Thick Films Materials thick film silver dielectric internal stress ceramics cantilever method |
| title | Study of Internal Stress in Conductive and Dielectric Thick Films |
| title_full | Study of Internal Stress in Conductive and Dielectric Thick Films |
| title_fullStr | Study of Internal Stress in Conductive and Dielectric Thick Films |
| title_full_unstemmed | Study of Internal Stress in Conductive and Dielectric Thick Films |
| title_short | Study of Internal Stress in Conductive and Dielectric Thick Films |
| title_sort | study of internal stress in conductive and dielectric thick films |
| topic | thick film silver dielectric internal stress ceramics cantilever method |
| url | https://www.mdpi.com/1996-1944/15/23/8686 |
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