Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy

Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy

GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of A...

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Bibliographic Details
Main Authors: Muhammad Junaid, Ching-Lien Hsiao, Yen-Ting Chen, Jun Lu, Justinas Palisaitis, Per Ola Åke Persson, Lars Hultman, Jens Birch
Format: Article
Language:English
Published: MDPI AG 2018-04-01
Series:Nanomaterials
Subjects:
GaN
nanorods
X-ray diffraction
TEM
photoluminescence
magnetron sputter epitaxy
sputtering
Online Access:http://www.mdpi.com/2079-4991/8/4/223

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