Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

Bibliographic Details
Main Authors: Seungho Cho, Chao Yun, Stefan Tappertzhofen, Ahmed Kursumovic, Shinbuhm Lee, Ping Lu, Quanxi Jia, Meng Fan, Jie Jian, Haiyan Wang, Stephan Hofmann, Judith L. MacManus-Driscoll
Format: Article
Language:English
Published: Nature Portfolio 2016-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12373
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author Seungho Cho
Chao Yun
Stefan Tappertzhofen
Ahmed Kursumovic
Shinbuhm Lee
Ping Lu
Quanxi Jia
Meng Fan
Jie Jian
Haiyan Wang
Stephan Hofmann
Judith L. MacManus-Driscoll
author_facet Seungho Cho
Chao Yun
Stefan Tappertzhofen
Ahmed Kursumovic
Shinbuhm Lee
Ping Lu
Quanxi Jia
Meng Fan
Jie Jian
Haiyan Wang
Stephan Hofmann
Judith L. MacManus-Driscoll
author_sort Seungho Cho
collection DOAJ
description Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.
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spelling doaj.art-e2ad2398bc014812b50b9081bad28e2d2022-12-21T23:08:56ZengNature PortfolioNature Communications2041-17232016-08-017111010.1038/ncomms12373Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switchingSeungho Cho0Chao Yun1Stefan Tappertzhofen2Ahmed Kursumovic3Shinbuhm Lee4Ping Lu5Quanxi Jia6Meng Fan7Jie Jian8Haiyan Wang9Stephan Hofmann10Judith L. MacManus-Driscoll11Department of Materials Science and Metallurgy, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeDepartment of Engineering, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeSandia National LaboratoryCenter for Integrated Nanotechnologies, Los Alamos National LaboratoryDepartment of Electrical and Computer Engineering, Texas A&M UniversityDepartment of Electrical and Computer Engineering, Texas A&M UniversityDepartment of Electrical and Computer Engineering, Texas A&M UniversityDepartment of Engineering, University of CambridgeDepartment of Materials Science and Metallurgy, University of CambridgeMetal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.https://doi.org/10.1038/ncomms12373
spellingShingle Seungho Cho
Chao Yun
Stefan Tappertzhofen
Ahmed Kursumovic
Shinbuhm Lee
Ping Lu
Quanxi Jia
Meng Fan
Jie Jian
Haiyan Wang
Stephan Hofmann
Judith L. MacManus-Driscoll
Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
Nature Communications
title Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_full Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_fullStr Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_full_unstemmed Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_short Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_sort self assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
url https://doi.org/10.1038/ncomms12373
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