Epitaxial HfTe2 Dirac semimetal in the 2D limit
One monolayer semimetallic HfTe2 thin films are grown on three substrates with different electronic properties in order to study the substrate effect on the electronic structure of the HfTe2 epilayer. Angle resolved photoelectron spectroscopy measurements indicate that the band features are identica...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0065839 |
| _version_ | 1819033465405833216 |
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| author | Polychronis Tsipas Panagiotis Pappas Evgenia Symeonidou Sotirios Fragkos Christina Zacharaki Evangelia Xenogiannopoulou Nikitas Siannas Athanasios Dimoulas |
| author_facet | Polychronis Tsipas Panagiotis Pappas Evgenia Symeonidou Sotirios Fragkos Christina Zacharaki Evangelia Xenogiannopoulou Nikitas Siannas Athanasios Dimoulas |
| author_sort | Polychronis Tsipas |
| collection | DOAJ |
| description | One monolayer semimetallic HfTe2 thin films are grown on three substrates with different electronic properties in order to study the substrate effect on the electronic structure of the HfTe2 epilayer. Angle resolved photoelectron spectroscopy measurements indicate that the band features are identical in all three cases, providing evidence that the HfTe2 epilayer does not interact with any of the substrates to form hybridized bands and any band feature originates from the HfTe2 material itself. However, a shift of HfTe2 energy bands is observed among the three cases, which is attributed to substrate electron doping. This paves the way for accessing the Dirac point of HfTe2 Dirac semimetal, which is located about ∼0.2 to 0.3 eV above the Fermi level in the case of suspended HfTe2 in a non-destructive way. |
| first_indexed | 2024-12-21T07:18:16Z |
| format | Article |
| id | doaj.art-e2e14b9374484c48b005528f37d07b9e |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T07:18:16Z |
| publishDate | 2021-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-e2e14b9374484c48b005528f37d07b9e2022-12-21T19:11:50ZengAIP Publishing LLCAPL Materials2166-532X2021-10-01910101103101103-610.1063/5.0065839Epitaxial HfTe2 Dirac semimetal in the 2D limitPolychronis Tsipas0Panagiotis Pappas1Evgenia Symeonidou2Sotirios Fragkos3Christina Zacharaki4Evangelia Xenogiannopoulou5Nikitas Siannas6Athanasios Dimoulas7Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceInstitute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15310 Athens, GreeceOne monolayer semimetallic HfTe2 thin films are grown on three substrates with different electronic properties in order to study the substrate effect on the electronic structure of the HfTe2 epilayer. Angle resolved photoelectron spectroscopy measurements indicate that the band features are identical in all three cases, providing evidence that the HfTe2 epilayer does not interact with any of the substrates to form hybridized bands and any band feature originates from the HfTe2 material itself. However, a shift of HfTe2 energy bands is observed among the three cases, which is attributed to substrate electron doping. This paves the way for accessing the Dirac point of HfTe2 Dirac semimetal, which is located about ∼0.2 to 0.3 eV above the Fermi level in the case of suspended HfTe2 in a non-destructive way.http://dx.doi.org/10.1063/5.0065839 |
| spellingShingle | Polychronis Tsipas Panagiotis Pappas Evgenia Symeonidou Sotirios Fragkos Christina Zacharaki Evangelia Xenogiannopoulou Nikitas Siannas Athanasios Dimoulas Epitaxial HfTe2 Dirac semimetal in the 2D limit APL Materials |
| title | Epitaxial HfTe2 Dirac semimetal in the 2D limit |
| title_full | Epitaxial HfTe2 Dirac semimetal in the 2D limit |
| title_fullStr | Epitaxial HfTe2 Dirac semimetal in the 2D limit |
| title_full_unstemmed | Epitaxial HfTe2 Dirac semimetal in the 2D limit |
| title_short | Epitaxial HfTe2 Dirac semimetal in the 2D limit |
| title_sort | epitaxial hfte2 dirac semimetal in the 2d limit |
| url | http://dx.doi.org/10.1063/5.0065839 |
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