The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities
Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temper...
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MDPI AG
2016-12-01
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| Series: | Nanomaterials |
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| Online Access: | http://www.mdpi.com/2079-4991/6/12/233 |
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| author | Dan Shan Mingqing Qian Yang Ji Xiaofan Jiang Jun Xu Kunji Chen |
| author_facet | Dan Shan Mingqing Qian Yang Ji Xiaofan Jiang Jun Xu Kunji Chen |
| author_sort | Dan Shan |
| collection | DOAJ |
| description | Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 103 S/cm and 4 × 102 S/cm is achieved for the P-doped and B-doped samples, respectively. |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-11T19:45:41Z |
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| series | Nanomaterials |
| spelling | doaj.art-e2f0274d033d403d9460be82946e24972022-12-22T00:52:55ZengMDPI AGNanomaterials2079-49912016-12-0161223310.3390/nano6120233nano6120233The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High ConductivitiesDan Shan0Mingqing Qian1Yang Ji2Xiaofan Jiang3Jun Xu4Kunji Chen5National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 103 S/cm and 4 × 102 S/cm is achieved for the P-doped and B-doped samples, respectively.http://www.mdpi.com/2079-4991/6/12/233carrier transportdopedtemperature-dependent Hall measurement |
| spellingShingle | Dan Shan Mingqing Qian Yang Ji Xiaofan Jiang Jun Xu Kunji Chen The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities Nanomaterials carrier transport doped temperature-dependent Hall measurement |
| title | The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities |
| title_full | The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities |
| title_fullStr | The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities |
| title_full_unstemmed | The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities |
| title_short | The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities |
| title_sort | change of electronic transport behaviors by p and b doping in nano crystalline silicon films with very high conductivities |
| topic | carrier transport doped temperature-dependent Hall measurement |
| url | http://www.mdpi.com/2079-4991/6/12/233 |
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