The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities
Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temper...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-12-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-4991/6/12/233 |