Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon
This paper is dedicated to the study of the tunable electromagnetic properties of HfO2 doped with Zr (further referred to as HfZrO) grown on high-resistivity silicon using atomic layer deposition (ALD) techniques. Two metallic coplanar lines patterned on HfZrO having different lengths have been used...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8844654/ |