Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor
We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO<sub>2</sub> (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8301014/ |
| _version_ | 1818369851110981632 |
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| author | Kyungmin Jang Nozomu Ueyama Masaharu Kobayashi Toshiro Hiramoto |
| author_facet | Kyungmin Jang Nozomu Ueyama Masaharu Kobayashi Toshiro Hiramoto |
| author_sort | Kyungmin Jang |
| collection | DOAJ |
| description | We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO<sub>2</sub> (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator. |
| first_indexed | 2024-12-13T23:30:24Z |
| format | Article |
| id | doaj.art-e317f94e04b34792957db3b868ce53b7 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T23:30:24Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-e317f94e04b34792957db3b868ce53b72022-12-21T23:27:27ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01634635310.1109/JEDS.2018.28069208301014Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> CapacitorKyungmin Jang0https://orcid.org/0000-0003-3381-4046Nozomu Ueyama1Masaharu Kobayashi2https://orcid.org/0000-0002-7945-6136Toshiro Hiramoto3https://orcid.org/0000-0001-9469-2631Institute of Industrial Science, University of Tokyo, Tokyo, JapanInstitute of Industrial Science, University of Tokyo, Tokyo, JapanInstitute of Industrial Science, University of Tokyo, Tokyo, JapanInstitute of Industrial Science, University of Tokyo, Tokyo, JapanWe have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO<sub>2</sub> (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator.https://ieeexplore.ieee.org/document/8301014/Ferroelectrichafnium-zirconium oxidenegative-capacitanceLandau-Khalatnikov theorymultiple domain |
| spellingShingle | Kyungmin Jang Nozomu Ueyama Masaharu Kobayashi Toshiro Hiramoto Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor IEEE Journal of the Electron Devices Society Ferroelectric hafnium-zirconium oxide negative-capacitance Landau-Khalatnikov theory multiple domain |
| title | Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor |
| title_full | Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor |
| title_fullStr | Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor |
| title_full_unstemmed | Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor |
| title_short | Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor |
| title_sort | experimental observation and simulation model for transient characteristics of negative capacitance in ferroelectric hfzro sub 2 sub capacitor |
| topic | Ferroelectric hafnium-zirconium oxide negative-capacitance Landau-Khalatnikov theory multiple domain |
| url | https://ieeexplore.ieee.org/document/8301014/ |
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