Superconductivity in hyperdoped Ge by molecular beam epitaxy
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation. Thin film growth of such a material would be advantag...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0157509 |
| _version_ | 1827821772782698496 |
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| author | Patrick J. Strohbeen Aurelia M. Brook Wendy L. Sarney Javad Shabani |
| author_facet | Patrick J. Strohbeen Aurelia M. Brook Wendy L. Sarney Javad Shabani |
| author_sort | Patrick J. Strohbeen |
| collection | DOAJ |
| description | Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation. Thin film growth of such a material would be advantageous, allowing homoepitaxy of doped and undoped Ge films and opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase, which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control, we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate. |
| first_indexed | 2024-03-12T01:48:48Z |
| format | Article |
| id | doaj.art-e3277abc91ca4be0b920c8896fd98df4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T01:48:48Z |
| publishDate | 2023-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e3277abc91ca4be0b920c8896fd98df42023-09-08T16:03:30ZengAIP Publishing LLCAIP Advances2158-32262023-08-01138085118085118-610.1063/5.0157509Superconductivity in hyperdoped Ge by molecular beam epitaxyPatrick J. Strohbeen0Aurelia M. Brook1Wendy L. Sarney2Javad Shabani3Center for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, USACenter for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, USAArmy Research Directorate, DEVCOM Army Research Laboratory, Adelphi, Maryland 20783, USACenter for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, USASuperconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation. Thin film growth of such a material would be advantageous, allowing homoepitaxy of doped and undoped Ge films and opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase, which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control, we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate.http://dx.doi.org/10.1063/5.0157509 |
| spellingShingle | Patrick J. Strohbeen Aurelia M. Brook Wendy L. Sarney Javad Shabani Superconductivity in hyperdoped Ge by molecular beam epitaxy AIP Advances |
| title | Superconductivity in hyperdoped Ge by molecular beam epitaxy |
| title_full | Superconductivity in hyperdoped Ge by molecular beam epitaxy |
| title_fullStr | Superconductivity in hyperdoped Ge by molecular beam epitaxy |
| title_full_unstemmed | Superconductivity in hyperdoped Ge by molecular beam epitaxy |
| title_short | Superconductivity in hyperdoped Ge by molecular beam epitaxy |
| title_sort | superconductivity in hyperdoped ge by molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/5.0157509 |
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