Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films
In this study, non-stoichiometry lead-free piezoelectric ceramic Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films were deposite...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-01-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/2/201 |
| _version_ | 1797621604461576192 |
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| author | Kai-Huang Chen Chien-Min Cheng Ying-Jie Chen Mei-Li Chen |
| author_facet | Kai-Huang Chen Chien-Min Cheng Ying-Jie Chen Mei-Li Chen |
| author_sort | Kai-Huang Chen |
| collection | DOAJ |
| description | In this study, non-stoichiometry lead-free piezoelectric ceramic Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films were deposited on Pt/Ti/Si substrates using spin-coating method technology to form a LKNNT/Pt/Ti/Si structure of the micro-pressure thick films. Additionally, the influence on the crystalline properties, surface microstructure images, and mechanical properties, and the piezoelectric properties of the non-stoichiometry lead-free piezoelectric ceramic Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films were observed, analyzed, and calculated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) microscopy, nano-indention technology, and other instruments. This study was divided into two parts: The first part was the investigation into the fabrication parameters and properties of the bottom layer (Pt) and buffer layer (Ti). The Pt/Ti/Si structures were achieved by the DC sputtering method, and then the rapid thermal annealing (RTA) post-treatment process was used to re-arrange the grains and reduce defects in the lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films. In the second part, lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) powder was prepared by the solid-state reaction method, and then acetic acid (C<sub>2</sub>H<sub>4</sub>O<sub>2</sub>) solvent was added to form a slurry for spin-coating technology processing. The fabrication parameters, thick film micro-structure, crystalline properties, nano-indention technology, and the piezoelectric coefficient characteristics of the developed lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT)/Pt/Ti/Si structure of the micro-pressure thick film devices a were investigated. According to the experimental results, the optimal fabrication processing parameters of the lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) were an RTA temperature of 500 °C, a Ti buffer-layer thickness of 273.9 nm, a Pt bottom electrode-layer thickness of 376.6 nm, a theoretical density of LKNNT of 4.789 g/cm<sup>3</sup>, a lattice constant of 3.968 × 10<sup>−8</sup> cm, and a d<sub>33</sub> value of 150 pm/V. Finally, regarding the mechanical properties of the micro-pressure devices for when a microforce of 3 mN was applied, the thick film revealed a hardness of 60 MPa, a Young’s modulus of 13 GPa, and an elasticity interval of 1.25 μm, which are suitable for future applications of micro-pressure devices. |
| first_indexed | 2024-03-11T08:59:24Z |
| format | Article |
| id | doaj.art-e337e2e521a84c5d95785cb835a0011b |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T08:59:24Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-e337e2e521a84c5d95785cb835a0011b2023-11-16T19:54:52ZengMDPI AGCrystals2073-43522023-01-0113220110.3390/cryst13020201Lead-Free Piezoelectric Ceramic Micro-Pressure Thick FilmsKai-Huang Chen0Chien-Min Cheng1Ying-Jie Chen2Mei-Li Chen3Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanDepartment of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanIn this study, non-stoichiometry lead-free piezoelectric ceramic Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films were deposited on Pt/Ti/Si substrates using spin-coating method technology to form a LKNNT/Pt/Ti/Si structure of the micro-pressure thick films. Additionally, the influence on the crystalline properties, surface microstructure images, and mechanical properties, and the piezoelectric properties of the non-stoichiometry lead-free piezoelectric ceramic Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films were observed, analyzed, and calculated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) microscopy, nano-indention technology, and other instruments. This study was divided into two parts: The first part was the investigation into the fabrication parameters and properties of the bottom layer (Pt) and buffer layer (Ti). The Pt/Ti/Si structures were achieved by the DC sputtering method, and then the rapid thermal annealing (RTA) post-treatment process was used to re-arrange the grains and reduce defects in the lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) thick films. In the second part, lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) powder was prepared by the solid-state reaction method, and then acetic acid (C<sub>2</sub>H<sub>4</sub>O<sub>2</sub>) solvent was added to form a slurry for spin-coating technology processing. The fabrication parameters, thick film micro-structure, crystalline properties, nano-indention technology, and the piezoelectric coefficient characteristics of the developed lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT)/Pt/Ti/Si structure of the micro-pressure thick film devices a were investigated. According to the experimental results, the optimal fabrication processing parameters of the lead-free Li<sub>0.058</sub>(K<sub>0.48</sub>Na<sub>0.535</sub>)<sub>0.966</sub>(Nb<sub>0.9</sub>Ta<sub>0.1</sub>)O<sub>3</sub> (LKNNT) were an RTA temperature of 500 °C, a Ti buffer-layer thickness of 273.9 nm, a Pt bottom electrode-layer thickness of 376.6 nm, a theoretical density of LKNNT of 4.789 g/cm<sup>3</sup>, a lattice constant of 3.968 × 10<sup>−8</sup> cm, and a d<sub>33</sub> value of 150 pm/V. Finally, regarding the mechanical properties of the micro-pressure devices for when a microforce of 3 mN was applied, the thick film revealed a hardness of 60 MPa, a Young’s modulus of 13 GPa, and an elasticity interval of 1.25 μm, which are suitable for future applications of micro-pressure devices.https://www.mdpi.com/2073-4352/13/2/201lead-freepiezoelectric ceramicmicro-pressurethick films |
| spellingShingle | Kai-Huang Chen Chien-Min Cheng Ying-Jie Chen Mei-Li Chen Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films Crystals lead-free piezoelectric ceramic micro-pressure thick films |
| title | Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films |
| title_full | Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films |
| title_fullStr | Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films |
| title_full_unstemmed | Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films |
| title_short | Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films |
| title_sort | lead free piezoelectric ceramic micro pressure thick films |
| topic | lead-free piezoelectric ceramic micro-pressure thick films |
| url | https://www.mdpi.com/2073-4352/13/2/201 |
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