Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the advancement of this rapidly e...

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Bibliographic Details
Main Authors: Nour El I. Boukortt, Trupti Ranjan Lenka, Salvatore Patanè, Giovanni Crupi
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Electronics
Subjects:
FinFET
gate-length downscaling
high-k gate dielectric
RF parameters
SOI
TCAD simulation
Online Access:https://www.mdpi.com/2079-9292/11/1/91

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