New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility
Abstract We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In2O3 (a-ITO) films. a-ITO films with various thicknesses (t) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-04-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2948-4 |
| Summary: | Abstract We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In2O3 (a-ITO) films. a-ITO films with various thicknesses (t) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional heating of the substrates by reactive plasma deposition with direct-current arc discharge. a-ITO films with t of more than 10 nm showed a high Hall mobility (μ H) of more than 50 cm2/V s. For 5-nm-thick a-ITO films, we found that μ H was as high as more than 40 cm2/V s. X-ray reflectivity measurement results revealed that the mass density (d m) determined the carrier transport in a-ITO films. For a-ITO films with t of more than 10 nm, d m had a high value of 7.2 g/cm3, whereas a-ITO films with t of less than 10 nm had low d m ranging from 6.6 to 6.8 g/cm3. Quantitative new insight from a size effect on the carrier transport is given for a-ITO films with t of less than 10 nm. This study shows that the ratio of t to mean free path of carrier electrons governed μ H. |
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| ISSN: | 1931-7573 1556-276X |