New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility

New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility

Abstract We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In2O3 (a-ITO) films. a-ITO films with various thicknesses (t) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional...

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Bibliographic Details
Main Authors: Yutaka Furubayashi, Makoto Maehara, Tetsuya Yamamoto
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
Tin-doped indium oxide
Amorphous film
Hall mobility
Mass density
Mean free path
Online Access:http://link.springer.com/article/10.1186/s11671-019-2948-4

Internet

http://link.springer.com/article/10.1186/s11671-019-2948-4

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