A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics
This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset ca...
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MDPI AG
2015-10-01
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Online Access: | http://www.mdpi.com/1424-8220/15/10/27359 |
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author | Haiyun Huang Dejun Wang Yue Xu |
author_facet | Haiyun Huang Dejun Wang Yue Xu |
author_sort | Haiyun Huang |
collection | DOAJ |
description | This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. |
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id | doaj.art-e360a77ebc76465b9d66326422f69784 |
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issn | 1424-8220 |
language | English |
last_indexed | 2024-04-11T12:36:06Z |
publishDate | 2015-10-01 |
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spelling | doaj.art-e360a77ebc76465b9d66326422f697842022-12-22T04:23:37ZengMDPI AGSensors1424-82202015-10-011510273592737310.3390/s151027359s151027359A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity CharacteristicsHaiyun Huang0Dejun Wang1Yue Xu2School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, ChinaSchool of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, ChinaCollege of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, ChinaThis paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.http://www.mdpi.com/1424-8220/15/10/27359monolithic Hall sensorsensitivity and linearityHall offsetdynamic offset cancellation technique |
spellingShingle | Haiyun Huang Dejun Wang Yue Xu A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics Sensors monolithic Hall sensor sensitivity and linearity Hall offset dynamic offset cancellation technique |
title | A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics |
title_full | A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics |
title_fullStr | A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics |
title_full_unstemmed | A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics |
title_short | A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics |
title_sort | monolithic cmos magnetic hall sensor with high sensitivity and linearity characteristics |
topic | monolithic Hall sensor sensitivity and linearity Hall offset dynamic offset cancellation technique |
url | http://www.mdpi.com/1424-8220/15/10/27359 |
work_keys_str_mv | AT haiyunhuang amonolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics AT dejunwang amonolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics AT yuexu amonolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics AT haiyunhuang monolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics AT dejunwang monolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics AT yuexu monolithiccmosmagnetichallsensorwithhighsensitivityandlinearitycharacteristics |