Dominant acceptors in Li doped, magnetron deposited Cu2O films

Cu _2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 ^20 Li/...

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Main Authors: M Nyborg, K Karlsen, K Bergum, E Monakhov
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ac3e24
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author M Nyborg
K Karlsen
K Bergum
E Monakhov
author_facet M Nyborg
K Karlsen
K Bergum
E Monakhov
author_sort M Nyborg
collection DOAJ
description Cu _2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 ^20 Li/cm ^3 have been achieved. Li doping significantly alters the electrical properties of Cu _2 O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu _2 O down to as low as 0.05 eV for higher Li concentrations.
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spelling doaj.art-e365a8c4308645dd8f4041a2346864872023-08-09T15:59:25ZengIOP PublishingMaterials Research Express2053-15912021-01-0181212590310.1088/2053-1591/ac3e24Dominant acceptors in Li doped, magnetron deposited Cu2O filmsM Nyborg0https://orcid.org/0000-0002-2787-9073K Karlsen1https://orcid.org/0000-0002-0904-2480K Bergum2https://orcid.org/0000-0002-4093-521XE Monakhov3https://orcid.org/0000-0002-7015-3358Physics Department/Centre for Materials Science and Nanotechnology, University of Oslo , PO Box 1048 Blindern, Oslo N-0316, NorwayPhysics Department/Centre for Materials Science and Nanotechnology, University of Oslo , PO Box 1048 Blindern, Oslo N-0316, NorwayPhysics Department/Centre for Materials Science and Nanotechnology, University of Oslo , PO Box 1048 Blindern, Oslo N-0316, NorwayPhysics Department/Centre for Materials Science and Nanotechnology, University of Oslo , PO Box 1048 Blindern, Oslo N-0316, NorwayCu _2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 ^20 Li/cm ^3 have been achieved. Li doping significantly alters the electrical properties of Cu _2 O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu _2 O down to as low as 0.05 eV for higher Li concentrations.https://doi.org/10.1088/2053-1591/ac3e24cuprous oxidedopinglithiumcarrier transportmagnetron sputtering
spellingShingle M Nyborg
K Karlsen
K Bergum
E Monakhov
Dominant acceptors in Li doped, magnetron deposited Cu2O films
Materials Research Express
cuprous oxide
doping
lithium
carrier transport
magnetron sputtering
title Dominant acceptors in Li doped, magnetron deposited Cu2O films
title_full Dominant acceptors in Li doped, magnetron deposited Cu2O films
title_fullStr Dominant acceptors in Li doped, magnetron deposited Cu2O films
title_full_unstemmed Dominant acceptors in Li doped, magnetron deposited Cu2O films
title_short Dominant acceptors in Li doped, magnetron deposited Cu2O films
title_sort dominant acceptors in li doped magnetron deposited cu2o films
topic cuprous oxide
doping
lithium
carrier transport
magnetron sputtering
url https://doi.org/10.1088/2053-1591/ac3e24
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AT kbergum dominantacceptorsinlidopedmagnetrondepositedcu2ofilms
AT emonakhov dominantacceptorsinlidopedmagnetrondepositedcu2ofilms