A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing
Temporal (race) computing schemes rely on temporal memories, where information is represented with the timing of signal edges. Standard digital circuit techniques can be used to capture the relative timing characteristics of signal edges. However, the properties of emerging device technologies could...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/24/2/512 |
| _version_ | 1797339444901052416 |
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| author | Juan Riquelme Ioannis Vourkas |
| author_facet | Juan Riquelme Ioannis Vourkas |
| author_sort | Juan Riquelme |
| collection | DOAJ |
| description | Temporal (race) computing schemes rely on temporal memories, where information is represented with the timing of signal edges. Standard digital circuit techniques can be used to capture the relative timing characteristics of signal edges. However, the properties of emerging device technologies could be particularly exploited for more efficient circuit implementations. Specifically, the collective dynamics of networks of memristive devices could be leveraged to facilitate time-domain computations in emerging memristive memories. To this end, this work studies the star interconnect configuration of bipolar memristive devices. Through circuit simulations using a behavioral model of voltage-controlled bipolar memristive devices, we demonstrated the suitability of such circuits in two different contexts, namely sensing and “rank-order” coding. We particularly analyzed the conditions that the employed memristive devices should meet to guarantee the expected operation of the circuit and the possible effects of device variability in the storage and the reproduction of the information in arriving signal edges. The simulation results in LTSpice validate the correct operation and confirm the promising application prospects of such simple circuit structures, which, we show, natively exist in the crossbar geometry. Therefore, the star interconnect configuration could be considered for temporal computations inside resistive memory (ReRAM) arrays. |
| first_indexed | 2024-03-08T09:47:11Z |
| format | Article |
| id | doaj.art-e37c89e661ca49c78f0b0fe3b792ec91 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-08T09:47:11Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-e37c89e661ca49c78f0b0fe3b792ec912024-01-29T14:15:43ZengMDPI AGSensors1424-82202024-01-0124251210.3390/s24020512A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal ComputingJuan Riquelme0Ioannis Vourkas1Department of Electronic Engineering, Universidad Técnica Federico Santa Maria, Avda. España 1680, Valparaiso 2390123, ChileDepartment of Electronic Engineering, Universidad Técnica Federico Santa Maria, Avda. España 1680, Valparaiso 2390123, ChileTemporal (race) computing schemes rely on temporal memories, where information is represented with the timing of signal edges. Standard digital circuit techniques can be used to capture the relative timing characteristics of signal edges. However, the properties of emerging device technologies could be particularly exploited for more efficient circuit implementations. Specifically, the collective dynamics of networks of memristive devices could be leveraged to facilitate time-domain computations in emerging memristive memories. To this end, this work studies the star interconnect configuration of bipolar memristive devices. Through circuit simulations using a behavioral model of voltage-controlled bipolar memristive devices, we demonstrated the suitability of such circuits in two different contexts, namely sensing and “rank-order” coding. We particularly analyzed the conditions that the employed memristive devices should meet to guarantee the expected operation of the circuit and the possible effects of device variability in the storage and the reproduction of the information in arriving signal edges. The simulation results in LTSpice validate the correct operation and confirm the promising application prospects of such simple circuit structures, which, we show, natively exist in the crossbar geometry. Therefore, the star interconnect configuration could be considered for temporal computations inside resistive memory (ReRAM) arrays.https://www.mdpi.com/1424-8220/24/2/512memristormemristive devicestar networktemporal memoryrank order code |
| spellingShingle | Juan Riquelme Ioannis Vourkas A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing Sensors memristor memristive device star network temporal memory rank order code |
| title | A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing |
| title_full | A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing |
| title_fullStr | A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing |
| title_full_unstemmed | A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing |
| title_short | A Star Network of Bipolar Memristive Devices Enables Sensing and Temporal Computing |
| title_sort | star network of bipolar memristive devices enables sensing and temporal computing |
| topic | memristor memristive device star network temporal memory rank order code |
| url | https://www.mdpi.com/1424-8220/24/2/512 |
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