Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs
The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be...
| Hlavní autoři: | , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
Hindawi Limited
2013-01-01
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| Edice: | The Scientific World Journal |
| On-line přístup: | http://dx.doi.org/10.1155/2013/931980 |