Low-Temperature Sinterable Cu@Ag Paste with Superior Strength Driven by Pre-Heating Process
To preserve the structural integrity of power semiconductor devices, ensuring a reliable connection between wide-bandgap (WBG) chips and their substrates at temperatures above 200 °C is crucial. Therefore, easily processable chip-attach materials with high bonding strengths at high temperatures shou...
Main Authors: | Miso Won, Dajung Kim, Hyunseung Yang, Chulmin Oh |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-07-01
|
Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/16/14/5419 |
Similar Items
-
Development of crack-less and deformation-resistant electroplated Ni/electroless Ni/Pt/Ag metallization layers for Ag-sintered joint during a harsh thermal shock
by: Yang Liu, et al.
Published: (2022-12-01) -
Atomic insight in fusion mechanism of heterogeneous and homogeneous sintering: Cu and Ag nanoparticles
by: Jiaxin Liu, et al.
Published: (2024-02-01) -
Characteristics of Die-Attach Method by Sinter Bonding Using AG-40CU Mechanically Alloyed Particles
by: Woo Lim Choi, et al.
Published: (2019-06-01) -
The effects of pressure, temperature, and depth/diameter ratio on the microvia filling performance of Ag-coated Cu micro-nanoparticles for advanced electronic packaging
by: Guannan Yang, et al.
Published: (2022-10-01) -
Low-Temperature and Low-Pressure Cu–Cu Bonding by Highly Sinterable Cu Nanoparticle Paste
by: Junjie Li, et al.
Published: (2017-04-01)