III-nitride nanowires for emissive display technology
The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional subst...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2024-01-01
|
| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2023.2282937 |
| _version_ | 1827345233654841344 |
|---|---|
| author | Veeramuthu Vignesh Yuanpeng Wu Sung-Un Kim Jeong-Kyun Oh Chandran Bagavath Dae-Young Um Zetian Mi Yong-Ho Ra |
| author_facet | Veeramuthu Vignesh Yuanpeng Wu Sung-Un Kim Jeong-Kyun Oh Chandran Bagavath Dae-Young Um Zetian Mi Yong-Ho Ra |
| author_sort | Veeramuthu Vignesh |
| collection | DOAJ |
| description | The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them. |
| first_indexed | 2024-03-07T23:02:34Z |
| format | Article |
| id | doaj.art-e3bb466aaff2478b95150f90ec637061 |
| institution | Directory Open Access Journal |
| issn | 1598-0316 2158-1606 |
| language | English |
| last_indexed | 2024-03-07T23:02:34Z |
| publishDate | 2024-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Information Display |
| spelling | doaj.art-e3bb466aaff2478b95150f90ec6370612024-02-22T12:26:47ZengTaylor & Francis GroupJournal of Information Display1598-03162158-16062024-01-01251135910.1080/15980316.2023.2282937III-nitride nanowires for emissive display technologyVeeramuthu Vignesh0Yuanpeng Wu1Sung-Un Kim2Jeong-Kyun Oh3Chandran Bagavath4Dae-Young Um5Zetian Mi6Yong-Ho Ra7Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USADivision of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaDivision of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaDivision of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaDivision of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USADivision of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaThe field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.https://www.tandfonline.com/doi/10.1080/15980316.2023.2282937µ-LEDfull-color LEDInGaN nanowiresmulti-quantum well (MQW)display technology |
| spellingShingle | Veeramuthu Vignesh Yuanpeng Wu Sung-Un Kim Jeong-Kyun Oh Chandran Bagavath Dae-Young Um Zetian Mi Yong-Ho Ra III-nitride nanowires for emissive display technology Journal of Information Display µ-LED full-color LED InGaN nanowires multi-quantum well (MQW) display technology |
| title | III-nitride nanowires for emissive display technology |
| title_full | III-nitride nanowires for emissive display technology |
| title_fullStr | III-nitride nanowires for emissive display technology |
| title_full_unstemmed | III-nitride nanowires for emissive display technology |
| title_short | III-nitride nanowires for emissive display technology |
| title_sort | iii nitride nanowires for emissive display technology |
| topic | µ-LED full-color LED InGaN nanowires multi-quantum well (MQW) display technology |
| url | https://www.tandfonline.com/doi/10.1080/15980316.2023.2282937 |
| work_keys_str_mv | AT veeramuthuvignesh iiinitridenanowiresforemissivedisplaytechnology AT yuanpengwu iiinitridenanowiresforemissivedisplaytechnology AT sungunkim iiinitridenanowiresforemissivedisplaytechnology AT jeongkyunoh iiinitridenanowiresforemissivedisplaytechnology AT chandranbagavath iiinitridenanowiresforemissivedisplaytechnology AT daeyoungum iiinitridenanowiresforemissivedisplaytechnology AT zetianmi iiinitridenanowiresforemissivedisplaytechnology AT yonghora iiinitridenanowiresforemissivedisplaytechnology |